FDG6301N-F085

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	220mA
Rds On (Max) @ Id, Vgs:	4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	9.5pF @ 10V
Power - Max:	300mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6

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Introduction

The FDG6301N-F085 is an ultra-low-on-resistance 9V N−Channel MOSFET array with five N−Channel MOSFETs integrated into a single device. It is used for controlling and driving applications in an electrical system. It is highly efficient and provides outstanding performance with a maximum voltage rating of 9V. This device is ideal for high-current applications such as power supply switching and motor control. In addition, the device is widely used in other applications such as audio amplifiers, LED lighting, power converters and more.

Application Field

The FDG6301N-F085 is widely used in different application fields due to its impressive performance and low-on-resistance. It is commonly used in applications where low on-resistance power switching and motor control are required, such as in audio amplifiers, LED lighting, switching power supplies and other power management systems. Furthermore, this device is also widely used in automotive, telecommunication, medical and industrial fields, where low on-resistance and high current is of utmost importance.

Working Principle

The FDG6301N-F085 is a 9V N−Channel MOSFET array consists of five N−Channel MOSFETs that are interconnected in parallel. The device works by allowing current to flow between the drains and sources when the gate is driven with a suitable voltage. When a positive voltage is applied to the gates, it allows current to flow from the sources to the drains. In addition, the device also works to provide protection by blocking off-state leakage current and short circuit protection.

Conclusion

The FDG6301N-F085 is a 9V N−Channel MOSFET array designed to provide maximum performance in applications that require high-current and low-on-resistance. It is used in a variety of applications, from audio amplifiers to LED lighting, power converters, power switching and motor control. Its working principle is based on allowing current to flow between the sources and drains when the gate is driven with a suitable voltage. The device also provides protection through off-state leakage current and short-circuit protection.

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