Allicdata Part #: | FDG6304P-X-ND |
Manufacturer Part#: |
FDG6304P-X |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | Mosfet Array |
DataSheet: | FDG6304P-X Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The FDG6304P-X series is a low-cost, high-performance semiconductor array device specifically designed for a wide range of switching and driving applications. It is a field effect transistor (FET) array consisting of 30 FET and 30 MOSFET devices.
The FDG6304P-X has many features that make it an ideal choice for a number of applications. These include a wide voltage range operating from 6 to 30 volts, a logic input range of 2.5 to 5 volts, and a low on-impedance range of 0.3 ohm. Furthermore, the output of the device is fully isolated from the input, allowing it to be used in multiple configurations without the need for additional isolation components.
The FDG6304P-X is typically used for switching and driving applications, such as digital control circuits, timing circuits, and voltage/current controllers. It can also be used for pulse width modulation (PWM) circuits, power supplies, digital signal processors (DSPs), and many other applications.
The working principle of the FDG6304P-X is based on the field effect transistors (FETs) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) which make up its array. These devices consist of an input terminal gate and two output terminals source and drain. The gate terminal is internally connected to an insulated gate, and the source and drain are connected to the load. When a signal is applied to the gate terminal, it induces a small amount of current which flows through the gate and causes a voltage drop across the source and drain. This voltage drop causes the transistor to turn "on" and current to flow through the load.
The FDG6304P-X provides a good performance and reliable switching for the most demanding applications. It is designed for low-power, high-performance applications, and its multiple output terminals make it suitable for many different configurations. In addition, its integrated heat sink and protective cover makes it ideal for use in harsh environments.
In summary, the FDG6304P-X is a versatile, low-cost, high-performance semiconductor array device specifically designed for a wide range of switching and driving applications. Its field effect transistor and MOSFET array provides an extended voltage range, logic input range and low on-impedance range. Furthermore, its low power and multiple output terminals make it suitable for a variety of configurations.
The specific data is subject to PDF, and the above content is for reference
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