FDG6323L-F169

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDG6323L-F169 is a MOSFET array manufactured by FDMS (Furukawa Electric Micro Devices). It is a transistor family that includes devices intended for use in several applications, from telecom and data centers to consumer electronics. The device provides low on-state resistance with excellent switching characteristics and offers several advantages over traditional transistors.

The FDG6323L-F169 is an array package consisting of eight N-channel MOSFETs which are designed so that two separate devices are joined into one package. This offers the convenience of having a single device at the same cost as two. The array also offers easy production of printed circuit boards because there is no need to order multiple devices or to manually install them. Additionally, it is much easier to program and control due to its integrated nature.

The device is ideal for applications that require high current switching. Its ability to withstand pulse currents of up to 650A makes it suitable for automotive and industrial applications. Moreover, its high energy efficiency and low on-state resistance make it well-suited for applications such as inverters, motor drivers and H-bridges.

The FDG6323L-F169 array operates in a bridge configuration. It has two output MOSFET transistors connected in parallel while two control transistors are connected in series. The two control transistors act as a switch that spins the current direction between the two output transistors. When the switch is in the "on" position, the two output transistors are driven into a linear region, allowing currents to flow in either direction depending on the selected bridge configuration.

The device is programmed and controlled through the use of voltage and current levels applied to the control pins. The operating voltage of the device is 12V, and the power dissipation in the control transistors can be up to 70W. The on-state resistance of the FDG6323L-F169 is typically 0.5 ohms, and its turn-off time is typically 10µs. The device also includes protection against both overload and short circuits.

The FDG6323L-F169 is an excellent MOSFET array for applications that require high current switching. Its low on-state resistance, combined with its excellent switching characteristics, make it an ideal choice for various automotive and industrial applications. Additionally, its integrated nature makes it easy to program and control, reducing production time and effort.

The specific data is subject to PDF, and the above content is for reference