FDG6304P_D87Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	410mA
Rds On (Max) @ Id, Vgs:	1.1 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	62pF @ 10V
Power - Max:	300mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDG6304P_D87Z Application Field and Working Principle

The FDG6304P_D87Z is a Field Effect Transistor (FET) Array manufactured by Fairchild Semiconductor. This type of transistor provides advanced levels of electrical performance and stability. It is designed to be used in target and pulse control applications, high speed switching, RF power amplifiers and power switching applications.The FDG6304P_D87Z is a single-die transistor array, built in a 4x4 layout. Each row has two n-channel devices, one n-channel device and one p-channel device. These transistors are all housed on a small 5mm x 7mm chip. The circuit is designed to be connected directly to the power supply and is rated for a maximum voltage of 50 volts. It operates at frequencies up to 500KHz.The FDG6304P_D87Z is often used in applications such as power switching, power amplifier design, Logic Gates, and high frequency signal amplifications. Its small size makes it ideal for these applications since it is able to reduce the need for extra components.The FDG6304P_D87Z has a high level of performance, with a drain-source breakdown voltage of 500V, and a transit time of 5 nanoseconds. It is also fast when switching, as the turn-on and turn-off time are both less than 1 microsecond.The working principle behind the FDG6304P_D87Z is based on the principles of field effect transistors. Field effect transistors are a special type of transistor that uses an electric field to control the behavior of electrons. In the case of the FDG6304P_D87Z, the electric field is generated by applying a voltage to the gate terminal and this creates an attraction or repulsion of the electrons. This charge is then used to control the flow of current between the source and the drain.The FDG6304P_D87Z has a high gain, which means that it can amplify a small signal while still maintaining a low power dissipation. This makes it suitable for use in high speed, high frequency applications that require high performance and stability.In conclusion, the FDG6304P_D87Z is a versatile FET Array that is excellent for use in target and pulse control applications, high speed switching, RF power amplifiers, and power switching applications. Its small size, high performance and low power dissipation make it ideal for use in these types of applications. The FDG6304P_D87Z is based on field effect transistor principles and provides an excellent combination of low cost, high performance and stability.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description