FDG6302P

Power - Max:	300mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	140mA
Rds On (Max) @ Id, Vgs:	10 Ohm @ 140mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	12pF @ 10V

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FDG6302P Application Field and Working Principle

FDG6302P is a type of array of low-Cost Surface Mount N-Channel MOSFETs. It is suitable for automotives, consumer electronics, industrial applications and power supplies. The FDG6302P also offers a wide range of features, such as high current and low on resistance, low capacitance between the drain and source, and ultra-low gate charge for high power performance.

Overview of FDG6302P Device

FDG6302P is a depletion-mode type of N-channel array. It consists of an array of two N-channel MOSFETs inside a single package. It has a fast switching capability, low gate charge, high on resistance, low output capacitance and low gate threshold voltage. It is available in a wide range of power levels, including 30V, 50V, 100V, 150V and 200V. The package of FDG6302P includes Surface Mount, SMD, and PQFN packages.

FDG6302P Features and Benefits

FDG6302P provides several advantages that make it suitable for a wide range of applications. It has a high current level of 45A, offering more power than most other low-cost arrays. The low on resistance of 50 mΩ enables high efficiency and low power dissipation. It also has a low gate charge, offering improved power performance and lower power loss in high-speed applications. It is also a low capacitance between the drain to source, reducing the amount of noise and interference in the circuit.

Applications of FDG6302P

FDG6302P is suitable for a wide range of applications, including power supplies, automotive and consumer electronics. It has a wide range of power levels, making it suitable for low to high voltage applications. The switching speed of the device makes it well suited for high-speed applications, such as DC-DC converters and switch mode power supplies. It can also be used in power supplies and other motor control applications.

Working Principle of FDG6302P

The FDG6302P is a depletion-mode type of N-channel array. This means that the N-channel MOSFETs in the array will remain conducting with no input voltage applied to the gate terminal. The conducting MOSFETs in the FDG6302P are connected in parallel and the combined output voltage and current will be determined by the source voltage.When a voltage is applied to the gate terminal, the MOSFETs will switch off, allowing the current and voltage to drop to the level determined by external components. To reverse the current flow and turn the devices on, a logic signal or a negative gate voltage can be applied to the gate terminal.

Conclusion

FDG6302P is a low-cost surface mount array of two N-channel MOSFETs. It has a high current rating of 45A, low on-resistance of 50 mΩ, low gate charge and low cap between the drain to source. It is suitable for a wide range of applications, such as automotive, power supplies, industrial, and consumer electronics. The working principle of the FDG6302P utilizes the gate voltage to switch the MOSFETs on and off, allowing the current and voltage to be managed.

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