FDG6303N_D87Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	500mA
Rds On (Max) @ Id, Vgs:	450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 10V
Power - Max:	300mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6

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Introduction to FDG6303N_D87Z

The FDG6303N_D87Z is a three-terminal, low power, N-channel Enhancement Mode Field-Effect Transistor (EMFET) array. It is manufactured using an advanced fabrication process and is available in a range of package types. The device has three terminals – drain, gate, and source – and is designed for operation in both high voltage and low voltage applications.

Application Field

The FDG6303N_D87Z is suitable for a wide range of applications. It is particularly suitable for use in high-voltage power supply circuits, low-voltage switching and protection devices, LED drivers, power amplifiers, power converters, automotive audio systems, and digital electronic circuits. The device can also be used in various process control systems, such as switching, monitoring, and regulating temperature, pressure, and voltage. The FDG6303N_D87Z is also widely used in a variety of consumer, commercial, and industrial applications, such as telecommunications equipment and computer peripherals. In addition, the device is used in a number of automotive, aerospace and military systems for controlling, monitoring and regulating on-board electronics.

Working Principle

The FDG6303N_D87Z is a three-terminal device and works on the principle of electrical field effect. In simple terms, it is a three-terminal device wherein, a small electrical signal (Gate Voltage) applied at one terminal (Gate) controls the output current flow from the second terminal (Drain) to the third terminal (Source). This device works based on the principle of controlling the flow of electrons between the source and drain based on a reference voltage at the gate. In an N-Channel FET, electrons are the majority carriers. The source and drain terminals are connected to the source, drain and gate terminal of an external circuit. The source and drain terminals also serve as a source of electrons in the external circuit. When a voltage is applied to the gate of the FDG6303N_D87Z, it sets up an electric field that modulates the size of the electron channel between the source and drain. By controlling the voltage applied to the gate, the device can be used to control the amount of current that flows between its terminals.

Conclusion

The FDG6303N_D87Z is an Enhancement Mode Field-Effect Transistor array that offers many advantages for a variety of applications. It is suitable for a wide range of applications and can be used in consumer, commercial, automotive, aerospace and military electronics for controlling and regulating on-board electronics. The device works based on the principle of controlling the flow of electrons between the source and drain based on a reference voltage at the gate and is an ideal solution for power supply circuits, low-voltage switching and protection devices, LED drivers, power amplifiers, power converters and more.

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