Allicdata Part #: | FDG6320C_D87Z-ND |
Manufacturer Part#: |
FDG6320C_D87Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 25V SC70-6 |
More Detail: | Mosfet Array N and P-Channel 25V 220mA, 140mA 300m... |
DataSheet: | FDG6320C_D87Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 220mA, 140mA |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 220mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 9.5pF @ 10V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
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The FDG6320C_D87Z is a device which is categorized under Transistors - FETs, MOSFETs - Arrays. This FET array allows for a high level of integration, saving time and space on a circuit board or within a printed circuit board layout. It consists of four independent N-Channel MOSFETs. The FET array also has a very low on-resistance which is important for high-current/low-voltage applications. In addition, it features an ultra-low gate charge, making it ideal for high-frequency applications. Further, the FETs have a low-voltage gate drive and a high-speed switching capability. This makes them suitable for use in power electronics, chargers, and other power conversion applications.In terms of application fields, the FDG6320C_D87Z can be used in battery management systems (BMS), motor drives, solar inverters, AC/DC converters, switched-mode power supply circuits, and many other applications. The FETs can be used as switches, allowing them to turn on/off a circuit, or as a controller for power conversion. This makes them ideal for creating circuits for high power applications, or for controlling high-power devices.The working principle of the FDG6320C_D87Z is the same as most other FET devices. It is an N-channel MOSFET array which is designed to provide high-power switching and current control capabilities. The device is composed of four independent N-channel MOSFETs which are connected in series with each other. The gate voltage of each MOSFET can be controlled via the gate pins. By adjusting the gate voltage of each MOSFET, the current flowing through the device can be controlled.The FDG6320C_D87Z is capable of operating at low-voltage, high-current conditions and is suitable for use in power electronics applications. In addition, the FET array also has a very low on-resistance and can be used as a switch or a power converter controller. It is an ideal device for creating circuits for a variety of power applications. Overall, the FDG6320C_D87Z is an effective device which can be used for a wide variety of applications in power electronics. It features a low-voltage gate drive, an ultra-low gate charge, and a high-speed switching capability. This makes it suitable for high-power applications such as battery management systems, solar inverters, AC/DC converters, and many other applications. In addition, the device is designed to provide high-power switching and current control capabilities.
The specific data is subject to PDF, and the above content is for reference
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