FDG6322C Discrete Semiconductor Products

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The FDG6322C is a high-performance enhancement-mode Neugart polyfet in a small footprint TSSOP, or Thin Small Outline Package. It is suitable for a wide range of high-voltage applications such as line drivers, power converters, switch mode power supplies, and motor control. The FDG6322C offers excellent performance characteristics, such as low power dissipation, wide input voltage range, high output current capability, and low-side gate drive.

The FDG6322C is an array of two independent N-Channel polyfet MOSFETs in a TSSOP package. Each device has two independent channels which can be used either in a push-pull configuration or in an independently fired configuration. The devices are capable of both low- side and high-side gate drive and feature an integrated driver stage to minimize external component count. The device is designed for operation in applications up to 30V. The output switches are designed for very low ON resistance and low input capacitance for improved efficiency and faster switch speeds.

The FDG6322C features a built-in thermal shutdown protection to protect the device from thermal runaway. The device also has built-in under-voltage lockout, over-voltage protection, and current limit protection. This ensures a safe operating temperature range and prevents the device from running away in event of a fault.

The FDG6322C is designed for use in high-voltage applications, enabling it to provide better efficiency, higher switching speeds, and better thermal stability. The wide input voltage range and low power dissipation make the device ideal for a variety of high-voltage applications. The wide drain to source voltage allows the device to operate in both low and high-voltage regimes. The device is also designed for fast switching, allowing for a reduced response time when switching from the low to high-state.

The FDG6322C features a built-in level shift logic enabling the device to operate over a wider range of power supply voltages. This level shift logic makes possible the use of the device in applications where the voltage requirements are beyond the normal operating range of the device. The device also has internal clamp circuits to limit the gate drive voltage, thus further protecting the device from faults.

The FDG6322C is a versatile and efficient MOSFET array suitable for a wide range of applications. It offers superior performance characteristics, such as low power dissipation, wide input voltage range, high-side gate drive, and low ON resistance. It also offers excellent thermal properties and protection features to make sure it operates safely within its specified voltage range. This makes the FDG6322C an ideal choice for high-voltage applications.

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