FDG6332C Discrete Semiconductor Products

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The FDG6332C is an integrated circuit that is an array of N-channel MOSFETs in a single package, hosting four channels in total. This array makes it possible for the FDG6332C to offer high input and switching efficiency, making it one of the most popular applications in the market.

The FDG6332C is designed to handle a maximum voltage of 30V and a maximum drain current of 2A per channel, making it suitable for high-current applications. It provides low on-state resistance and high switching speed, and its maximum drain-source on-resistance of 35mΩ per channel gives excellent control and speed of the switching process. Furthermore, the gate-source threshold voltage of the individual transistors is less than 1.8V, making it easier to drive and reducing power consumption.

The FDG6332C offers a drain-gate short protection feature to protect against accidental short gateway. This feature automatically limits current buildup between the gate and drain of the MOSFET, reducing the risk of damage from static discharges. The design also includes an internal damper diode to protect against reverse currents, making it suitable for a wide range of applications.

In terms of its application fields, the FDG6332C is widely used in various industrial applications, such as intelligent control of DC motors, LED/LCD backlighting, power tools and automotive electronics. It can also be used as a general motor control in unmanned equipment and as a switching element for power supplies.

The operating principle of the FDG632C is relatively simple. It is an array of four N-channel MOSFETs, connected in parallel. Each transistor has three pins: gate, drain, and source. The gate pin is the control terminal, and when it is activated with a high electric potential, it allows the current to pass through the drain and source pins. The electric potential of the gate pin determines the current that is allowed to pass through the drain and source pins — the higher the potential, the higher the current that is allowed to pass through. The other two pins are the source, which is the input of current; and the drain, which is the output for the current.

In conclusion, the FDG6332C is an array of N-channel MOSFETs that is ideal for high current applications, providing excellent control, high switching speed and reliability. Its features include a drain-gate short protection feature, an internal damper diode and a low on-state resistance, making it suitable for a wide range of applications, in areas such as industrial control, automotive electronics, and power supplies. Its operating principle is simple, and it is activated by the electric potential of its gate pin.

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