FDG6332C-F085

Series:	Automotive, AEC-Q101, PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	700mA, 600mA
Rds On (Max) @ Id, Vgs:	300 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	113pF @ 10V
Power - Max:	300mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6

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IntroductionThe FDG6332C-F085 is a type of MOSFET array, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor array. MOSFETs are transistors that allow current to flow through it depending on the gate voltage applied. It is a form of field-effect transistor, meaning it is an active electronic device containing an insulated gate that controls the flow of electrons between the source and the drain.Application FieldThe FDG6332C-F085 is mainly used in applications requiring high power handling and reliable performance. It is often found in power amplifier circuits and DC motor control systems. It is also widely used in electronic power converters, such as AC-DC converters and DC-DC converters. The FDG6332C-F085 is also used to switch on and off load switches, making it suitable for use in lighting circuits and battery management systems.Working PrincipleFET arrays contain multiple transistors that are arranged in a way that the transistor with the highest voltage at its gate is enabled, and the other transistors are disabled. The FDG6332C-F085 contains two P-channel transistors and three N-channel transistors. When the gate voltage of a transistor is higher than the gate voltage of other transistors, the transistor will be enabled and the current will flow from the source to the drain. The amount of current that can flow through a transistor is determined by the voltage difference between the source and the drain, known as the drain-source voltage (VDS).When the drain-source voltage is applied to the array, the current will flow through the enabled transistor, while the other transistors remain disabled. This allows for better control of the current flow, making the FETs in the array more efficient.ConclusionThe FDG6332C-F085 is a Metal-Oxide-Semiconductor Field-Effect Transistor array, featuring two P-channel transistors and three N-channel transistors. It is mainly used in applications requiring high power handling and reliable performance, such as power amplifier circuits, DC motor control systems, and electronic power converters. The FDG6332C-F085 allows for better control of the current flow, by enabling the transistor with the highest gate voltage and disabling the other transistors. This leads to better efficiency and improved performance.

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