FDG6304P

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The FDG6304P Transistor Array is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device designed to perform a variety of switching and analog amplifier applications. It is designed to be used in high-frequency applications, such as computer processor chips, electronic switches, and high speed digital communication systems. It is also suitable for use in low power, low voltage applications. Its package characteristic allows a high packing compatible with the large-scale integrated circuit technology.

The FDG6304P Transistor Array is based on an advanced MOSFET process. It combines the high power handling of the MOSFET with the low level drive of a bipolar transistor, enabling the FDG6304P to provide voltage and power control to a wide range of circuits. The FDG6304P has a wide range of features including offset voltages, ESD protection, internal protection diode, and excellent thermal management. The FDG6304P also features a low capacitance and low power consumption.

The FDG6304P is composed of four P-Channel MOSFETs in a single integrated package. The transistor array is designed with two individual channels designated as Channel A and Channel B. Each of the two channels of FDG6304P Transistor Array is internally connected in parallel to form a three terminal device, with the third terminal intended for control purposes. The device drains both channels current in either direction, providing symmetrical high-speed switching. The wide range of input voltage handling of up to 12V permits the current control to range from near 0 to up to 5A; allowing for a great deal of flexibility in system design.

The FDG6304P also features a high switching frequency of up to 500KHz, permitting high-speed digital signal processing operation. The rated current of the device is 5A, making it suitable for digital and analog applications requiring large currents. The device also has low on-resistance of up to 2.3mΩ, providing excellent performance and low power dissipation. The high throughput and efficient power control provided by the FDG6304P makes it suitable for use in a wide range of applications.

The FDG6304P is ideally suited to use in low voltage applications such as audio amplifiers, telecommunication circuits, television receivers, and other electronic devices requiring a wide range of current regulation. Additionally, the FDG6304P is suitable for use in battery powered and portable applications, since it has a low quiescent supply current of only 50μA. The FDG6304P is also ideal for automotive applications, due to its excellent temperature stability and its high speed switching capabilities.

The FDG6304P Transistor Array is a versatile MOSFET device suitable for a wide range of applications. The device is capable of providing high-power switching, high-speed operation, low on-resistance, and low power consumption. The FDG6304P includes special features such as ESD protection, an offset voltage, and an internal protection diode. The FDG6304P is ideally suited to low voltage applications, battery powered applications, and automotive applications.

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