Allicdata Part #: | FDG6317NZTR-ND |
Manufacturer Part#: |
FDG6317NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.7A SC70-6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Su... |
DataSheet: | FDG6317NZ Datasheet/PDF |
Quantity: | 1808 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 700mA |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 700mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 66.5pF @ 10V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDG6317NZ is a type of field effect transistor (FET) array, mainly used for data transmission applications such as radio frequency (RF) signal processing and radio frequency identification (RFID). It is a high-frequency, high-performance transistor array with very low power consumption and good signal-to-noise ratio. This type of FET array also has a wide frequency range of operation, which makes it an ideal choice for RF signal processing and RFID applications.
FDG6317NZ Working Principle
The working principle of FDG6317NZ FET array is based on the fact that when a current is applied between two bipolar transistors, a voltage is generated between the two transistors. This voltage is then used to turn on an additional transistor, and the resulting amplifier creates an increased voltage that is applied to the transistors. In this way, the current between two transistors is amplified, and the signal is amplified to a higher level. The FDG6317NZ FET array provides both high gain and high linearity for various signal processing applications.
The FDG6317NZ FET array has a high input impedance, which helps to maintain the signal integrity and reduce signal noise. The wide operating frequency range also means that it can be used for a variety of applications, from wireless communication to audio and video processing. It also has a high-resistance input resistance, which improves the transmission of low-frequency signals. This makes it especially useful for radio frequency applications.
The FDG6317NZ FET array also has a wide variety of features that make it suitable for various data transmission applications. For example, it has a low noise figure, high gain-bandwidth product, fast switching speeds, and superior temperature stability. In addition, it can be configured to operate in a variety of manufacturing processes, such as gallium arsenide (GaAs) and silicon (Si). This allows the array to be used for various data processing applications, including radio frequency (RF) signaling.
FDG6317NZ Application Field
The FDG6317NZ FET array is ideally suited for a variety of data transmission applications. It is particularly suitable for radio frequency (RF) signal processing and radio frequency identification (RFID) applications. This type of FET array provides a high-speed, low-noise, and high-linearity signal amplification and transmission. It is especially beneficial for applications that require high data rate, such as wireless communication and audio/video processing.
The FDG6317NZ FET array is also widely used in automotive, medical, industrial, and communication applications. It is a good choice for RFID systems that require high efficiency and long-term performance. This type of FET array can also be used in a wide range of consumer and industrial electronics, from microwave devices and power supplies to audio and video systems. Furthermore, it can be used to improve the accuracy of various digital systems and communications devices.
In addition, the FDG6317NZ FET array is also ideal for a wide range of circuit designs, including high-speed logic circuits, analog circuits, and digital systems. It is a versatile component that can be adapted to a variety of applications and requirements. For example, it is suitable for sensor applications, radio frequency (RF) signal processing, and other applications.
Conclusion
The FDG6317NZ FET array is an excellent choice for a variety of data transmission applications. Its high-speed, high-linearity, and low-noise features make it an ideal component for a variety of data transmission applications, such as wireless communication, audio/video processing, RFID systems, and automotive and communication applications. Furthermore, it can be configured to operate in a variety of manufacturing processes and can be adapted to different applications and requirements.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDG6304P_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 25V 0.41A SC... |
FDG6313N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6302P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 25V 0.14A SC... |
FDG6301N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 0.22A SC... |
FDG6303N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6314P | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 25V SC70-6Mo... |
FDG6320C_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6322C_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6303N_G | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6304P-F169 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6304P-X | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6321C-F169 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6323L-F169 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6303N-F169 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6301N-F085P | ON Semicondu... | -- | 1000 | DUAL NMOS SC70-6 25V 4OHM... |
FDG6318P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 0.5A SC7... |
FDG6306P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 0.6A SC7... |
FDG6303N | ON Semicondu... | -- | 50000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6317NZ | ON Semicondu... | -- | 1808 | MOSFET 2N-CH 20V 0.7A SC7... |
FDG6332C-F085 | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V SC70-6M... |
FDG6301N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.22A SC... |
FDG6301N-F085 | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.22A SC... |
FDG6320C | ON Semicondu... | -- | 3000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6324L | ON Semicondu... | -- | 1000 | IC LOAD SWITCH INT 20V SC... |
FDG6342L | ON Semicondu... | -- | 1000 | IC LOAD SWITCH INTEGRATED... |
FDG6331L | ON Semicondu... | -- | 1000 | IC LOAD SWITCH INT 8V SC7... |
FDG6323L | ON Semicondu... | -- | 1167 | IC FET LOAD SW P-CHAN SC7... |
FDG6323L_D87Z | ON Semicondu... | 0.0 $ | 1000 | IC LOAD SWITCH INT 8V SC7... |
FDG6332C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V SC70-6M... |
FDG6322C | ON Semicondu... | -- | 225 | MOSFET N/P-CH 25V SC70-6M... |
FDG6316P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 12V 0.7A SC7... |
FDG6321C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6318PZ | ON Semicondu... | -- | 9000 | MOSFET 2P-CH 20V 0.5A SC7... |
FDG6304P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 25V 0.41A SC... |
FDG6308P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 0.6A SC7... |
FDG6335N | ON Semicondu... | -- | 544 | MOSFET 2N-CH 20V 0.7A SOT... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...