FDG6316P Discrete Semiconductor Products |
|
Allicdata Part #: | FDG6316PTR-ND |
Manufacturer Part#: |
FDG6316P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 12V 0.7A SC70-6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Su... |
DataSheet: | FDG6316P Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 700mA |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 700mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 146pF @ 6V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.FDG6316P is a type of array transistor which is primarily used as a driver power switch and is broadly used in industrial applications such as motor control, audio amplification, and controlling of high power systems. It is a voltage controlled field effect transistor (FET) array which consists of sixteen N-channel FETs which are formed in a single 30-pin surface mount package.
The source and drain of each FET are configured to be connected potentially in parallel or series, and the FETs can be used as a power switch for various industrial applications. The FETs in FDG6316P have a low on-resistance and have excellent control speed as well as good power losses hence they are primarily used in critical power control applications.
To understand how the FDG6316P works, we must look at its internal components first. It consists of a silicon substrate containing sixteen FETs which are formed together in a single package. These FETs are connected together in an array with two control inputs and two output terminals. The control inputs are connected to each other to create a control voltage, while the output terminals are connected to the drain of each FET.
The voltage applied to the control inputs is used to control the transistors and determines the amount of current which is allowed to pass through each FET. The amount of current which is allowed to pass through each FET is known as the FET’s threshold voltage and when this threshold voltage is exceeded, the FET turns ‘on’ and allows a certain amount of current to pass through it. The control voltage applied to the inputs can also be used to turn ‘off’ a FET by applying a voltage which is less than the threshold voltage.
The FDG6316P also features a high-intensity gate driver which is able to control multiple FETs simultaneously. The gate driver is responsible for delivering the necessary amount of current to each FET and can be used to control multiple FETs simultaneously. This allows the FDG6316P to offer excellent speed and accuracy and is the main reason why it is used in high power applications.
The FDG6316P is also able to offer excellent noise suppression capabilities and is not susceptible to electrostatic discharge. This means that it is able to provide a quieter and more reliable performance and is able to protect sensitive components from unexpected power surges.
Overall, the FDG6316P is an excellent choice for industrial applications that require a reliable and efficient power switch. It is able to provide excellent control speed and accuracy, as well as low power losses and excellent noise suppression characteristics. Thanks to its ability to control multiple FETs simultaneously, the FDG6316P offers excellent speed and accuracy and is the ideal choice for high power control applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDG6304P_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 25V 0.41A SC... |
FDG6313N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6302P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 25V 0.14A SC... |
FDG6301N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 0.22A SC... |
FDG6303N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6314P | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 25V SC70-6Mo... |
FDG6320C_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6322C_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6303N_G | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6304P-F169 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6304P-X | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6321C-F169 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6323L-F169 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
FDG6303N-F169 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6301N-F085P | ON Semicondu... | -- | 1000 | DUAL NMOS SC70-6 25V 4OHM... |
FDG6318P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 0.5A SC7... |
FDG6306P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 0.6A SC7... |
FDG6303N | ON Semicondu... | -- | 50000 | MOSFET 2N-CH 25V 0.5A SC7... |
FDG6317NZ | ON Semicondu... | -- | 1808 | MOSFET 2N-CH 20V 0.7A SC7... |
FDG6332C-F085 | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V SC70-6M... |
FDG6301N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.22A SC... |
FDG6301N-F085 | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.22A SC... |
FDG6320C | ON Semicondu... | -- | 3000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6324L | ON Semicondu... | -- | 1000 | IC LOAD SWITCH INT 20V SC... |
FDG6342L | ON Semicondu... | -- | 1000 | IC LOAD SWITCH INTEGRATED... |
FDG6331L | ON Semicondu... | -- | 1000 | IC LOAD SWITCH INT 8V SC7... |
FDG6323L | ON Semicondu... | -- | 1167 | IC FET LOAD SW P-CHAN SC7... |
FDG6323L_D87Z | ON Semicondu... | 0.0 $ | 1000 | IC LOAD SWITCH INT 8V SC7... |
FDG6332C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V SC70-6M... |
FDG6322C | ON Semicondu... | -- | 225 | MOSFET N/P-CH 25V SC70-6M... |
FDG6316P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 12V 0.7A SC7... |
FDG6321C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 25V SC70-6M... |
FDG6318PZ | ON Semicondu... | -- | 9000 | MOSFET 2P-CH 20V 0.5A SC7... |
FDG6304P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 25V 0.41A SC... |
FDG6308P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 0.6A SC7... |
FDG6335N | ON Semicondu... | -- | 544 | MOSFET 2N-CH 20V 0.7A SOT... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...