FDMC8030

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The FDMC8030 is a family of low voltage, small gate size N-channel power metal oxide-semiconductor field-effect transistors (MOSFETs). It is designed for use in space-constrained applications and high power switching applications - like portable devices such as mobile phones, personal digital assistants, and laptop computers. FDMC8030 transistors are available with drain-source breakdown voltage (VDSS) ratings from 25V to 180V.

The FDMC8030 offers an extra low on resistance, combined with low gate charge, high frequency operation and fast switching performance, and can also be used as a direct-drive power switch, managing power-up and power-down sequencing. Its fast switching capability and low gate charge allows the device to switch high current and voltage applications quickly, making it ideal for power control and conversion, as well as audio and video applications.

This family of devices has many features that make it suitable for data storage, telecommunication, and industrial applications such as motor control in AC/DC power supplies and DC/DC converters. The low-voltage design of the FDMC8030 allows for reliable operations across a wide range of temperatures and voltages, ensuring compatibility across a variety of applications. Its high power density, good resistance to radiation and thermal performance also make it suitable for a range of environments.

The FDMC8030 is available in D-Pak, D-PAKX, D2PAK, SOT223, TSOP-6 and TO-220 packages. It is lead-free and RoHS compliant.

The device has a number of key electrical characteristics, including a drain-source breakdown voltage of 25V to 180V, on-resistance at 25°C of 7.1m Ω to 100m Ω, gate threshold voltage of 2.2V to 3V, gate-source voltage of ±10V, and drain current of up to 11A. It features a very low gate charge, with typical values of 4.2nC to 12nC. The device also features a low output capacitance, with typical values of 20pF to 36pF.

The working principle of the FDMC8030 MOSFET is based on the movement of electrons in an electrical field. The channel of the device is formed between the semiconductor material and the gate electrode. This channel is then filled by electrons, creating a ‘channel’ between the source and drain. When a voltage is applied to the gate electrode, it creates a localized electric field within the device which pushes electrons from the source to the drain. When the voltage is removed, the electrons return to their normal positions, turning off the device.

The FDMC8030 is well suited for use in a variety of power handling and switching applications, such as power supplies, DC/DC converters, switched-mode amplifiers, data storage and motor control systems. It is also ideal for applications where higher power density and precision switching is required, such as video and audio systems.

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