FDMC86106LZ Discrete Semiconductor Products |
|
| Allicdata Part #: | FDMC86106LZCT-ND |
| Manufacturer Part#: |
FDMC86106LZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 3.3A POWER33 |
| More Detail: | N-Channel 100V 3.3A (Ta), 7.5A (Tc) 2.3W (Ta), 19W... |
| DataSheet: |  FDMC86106LZ Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-MLP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 19W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 103 mOhm @ 3.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta), 7.5A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Cut Tape (CT) |
Description
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- Introduction:The FDMC86106LZ is a Metal Oxide (MOSFET) semiconductor that has been developed and released by Fairchild semiconductors. It is widely used in all kinds of industries, due to its unique features that provide superior power performance and efficiency.
- Application Field:The FDMC86106LZ is mainly used in a range of power management applications and designs that require a high efficient MOSFET. It is most popular in the smart home automation area, computing, telecommunications, medical, automotive and industrial engineering applications. Additionally, the FDMC86106LZ is designed for applications such as motor control, LED lighting, and switching applications.
- Working Principle:The FDMC86106LZ operates with an enhancement-mode mechanism. Within the device, a metal gate is used as the gate electrode and the gate is insulated from the substrate with an insulating layer composed of either silicon dioxide or silicon nitride. When a positive voltage is applied to the gate, electrons from the source region diffuse through the insulating layer towards the gate and are attracted to it. This effectively inverts the p-channel device and a current flows through the drain region. When a negative voltage is applied to the gate, the electrons are repelled away from the gate and the current is no longer able to flow.The FDMC86106LZ has two other design characteristics that enable it to perform well. First, the FDMC86106LZ has a low drain-to-source leakage current which is beneficial when used in low power applications. Second, the FDMC86106LZ has a low on resistance. This means that the FDMC86106LZ can switch a higher current while dissipating less power.
- Conclusion:The FDMC86106LZ Metal Oxide Field Effect Transistor (MOSFET) is a widely used semiconductor designed for power management applications. It is most popular in the smart home automation area, computing, telecommunications, medical, automotive and industrial engineering applications. By utilizing an enhancement-mode mechanism and low drain-to-source leakage current, the FDMC86106LZ is capable of providing superior power performance and efficiency.
The specific data is subject to PDF, and the above content is for reference
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