FDMC86183 Discrete Semiconductor Products

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The FDMC86183 is a single field effect transistor (FET) synthesized from state-of the-art metal oxide semiconductor (MOS) fabrication technique for use in a wide range of electronic applications. It is specifically designed for high-power, high-speed switching applications in the microwave and industrial electronics field.

The FDMC86183 is an N-channel enhancement-mode device with a rated drain current of up to 5A and a drain-source voltage of up to 30V. It is designed to have extremely low on-resistance to reduce power loss, improving efficiency and system reliability. The device\'s gate voltage is designed to support a wide range of high-speed operations, including microwave switching applications.

The working principle of the FDMC86183 is based on a MOSFET device, which is a type of FET where the gate electrode is electrically insulated from the majority carrier by a dielectric layering, typically a silicon dioxide coating. The dielectric layer prevents the gate electrode from coming into direct contact with the FET channel, which is where current flows.

When a voltage is applied to the gate terminal of the FET, the electric field associated with that voltage attracts charge carriers in the MOSFET channel. This attraction of charge carriers changes the conductivity of the channel, allowing it to conduct electricity from the source to the drain. The more voltage applied to the gate, the more charge carriers that are attracted and the greater the conductivity of the channel. This allows the FDMC86183 to provide excellent switching performance at high frequencies, resulting in improved performance in microwave devices and other high-frequency switching applications.

The FDMC86183 provides excellent performance when used as a switch for electronic applications in areas such as industrial electronics and microwave systems. Its low on-resistance reduces power loss, resulting in improved efficiency and reliability. In addition, its wide range of high-speed operations make it ideal for high-frequency switching applications.

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