FDMC86184 Allicdata Electronics
Allicdata Part #:

FDMC86184TR-ND

Manufacturer Part#:

FDMC86184

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 57A 8PQFN
More Detail: N-Channel 100V 57A (Tc) 54W (Tc) Surface Mount 8-P...
DataSheet: FDMC86184 datasheetFDMC86184 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 110µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 6V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMC86184 is a single field-effect transistor (FET) which is unipolar and utilizes a metal-oxide semiconductor (MOS). It can be used in a wide variety of applications, from low-power voltage regulation to higher power applications such as switch-mode power supplies and motor control. It is typically used in switching and power regulation applications, but can also be used as a driver stage in amplifiers and radio frequency (RF) amplifiers.

In order to understand how the FDMC86184 works, it is important to understand the basics of FETs and MOSFETs. FETs are three-terminal semiconductor devices that consist of a gate, source, and drain. The gate is where the voltage can be applied to control the device, and the source and drain are the two current terminals. The source is the input side of the device, while the drain is the output side. When a positive voltage is applied to the gate, it forms what is known as an “inversion layer” between the gate and the source and drain, thus allowing current to flow.

MOSFETs are similar to FETs, but they use a metal-oxide surface layer between the gate and the source, instead of an inversion layer. The advantage of MOSFETs is that they require less gate current drive than FETs, and can switch faster. The FDMC86184 is a single MOSFET, meaning that it has only one channeling electrode between the source and the drain.

The FDMC86184 has numerous features and benefits which make it an excellent choice for many applications. It is designed to operate at up to 500V and at temperatures ranging from -40 to +125°C. It has a maximum on-state resistance of 0.01 ohms, and a maximum drain current of 7A. In addition, it has an incredibly high maximum blocking voltage of 650V and a breakdown voltage of 600V, making it suitable for a variety of high voltage applications.

The FDMC86184 is also extremely efficient and low power, with a maximum power dissipation of 1.7W. This makes it ideal for low power applications, such as battery-powered systems, where power consumption needs to be kept at a minimum. The FDMC86184 is also designed to be very easy to use, with an adjustable gate voltage range of 4V to 10V, and an adjustable gate-source voltage range of 0.8V to 4V.

Perhaps the most important thing to note about the FDMC86184 is its wide range of application fields. It can be used in a variety of applications, such as low-voltage voltage regulator circuits, motor control circuits, and oscillator circuits, as well as in switch-mode power supplies. It can also be used as a driver stage in amplifiers and RF amplifiers.

The FDMC86184 is an excellent choice for a wide range of applications, due to its small size, high efficiency, and low power dissipation. It is particularly well suited for low power applications, such as battery-powered systems, where power consumption needs to be kept at a minimum. It is also very easy to use, thanks to its adjustable gate voltage and gate-source voltage ranges.

The specific data is subject to PDF, and the above content is for reference

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