
Allicdata Part #: | FDMC86184TR-ND |
Manufacturer Part#: |
FDMC86184 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 57A 8PQFN |
More Detail: | N-Channel 100V 57A (Tc) 54W (Tc) Surface Mount 8-P... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 110µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-PQFN (3.3x3.3), Power33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2090pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 6V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMC86184 is a single field-effect transistor (FET) which is unipolar and utilizes a metal-oxide semiconductor (MOS). It can be used in a wide variety of applications, from low-power voltage regulation to higher power applications such as switch-mode power supplies and motor control. It is typically used in switching and power regulation applications, but can also be used as a driver stage in amplifiers and radio frequency (RF) amplifiers.
In order to understand how the FDMC86184 works, it is important to understand the basics of FETs and MOSFETs. FETs are three-terminal semiconductor devices that consist of a gate, source, and drain. The gate is where the voltage can be applied to control the device, and the source and drain are the two current terminals. The source is the input side of the device, while the drain is the output side. When a positive voltage is applied to the gate, it forms what is known as an “inversion layer” between the gate and the source and drain, thus allowing current to flow.
MOSFETs are similar to FETs, but they use a metal-oxide surface layer between the gate and the source, instead of an inversion layer. The advantage of MOSFETs is that they require less gate current drive than FETs, and can switch faster. The FDMC86184 is a single MOSFET, meaning that it has only one channeling electrode between the source and the drain.
The FDMC86184 has numerous features and benefits which make it an excellent choice for many applications. It is designed to operate at up to 500V and at temperatures ranging from -40 to +125°C. It has a maximum on-state resistance of 0.01 ohms, and a maximum drain current of 7A. In addition, it has an incredibly high maximum blocking voltage of 650V and a breakdown voltage of 600V, making it suitable for a variety of high voltage applications.
The FDMC86184 is also extremely efficient and low power, with a maximum power dissipation of 1.7W. This makes it ideal for low power applications, such as battery-powered systems, where power consumption needs to be kept at a minimum. The FDMC86184 is also designed to be very easy to use, with an adjustable gate voltage range of 4V to 10V, and an adjustable gate-source voltage range of 0.8V to 4V.
Perhaps the most important thing to note about the FDMC86184 is its wide range of application fields. It can be used in a variety of applications, such as low-voltage voltage regulator circuits, motor control circuits, and oscillator circuits, as well as in switch-mode power supplies. It can also be used as a driver stage in amplifiers and RF amplifiers.
The FDMC86184 is an excellent choice for a wide range of applications, due to its small size, high efficiency, and low power dissipation. It is particularly well suited for low power applications, such as battery-powered systems, where power consumption needs to be kept at a minimum. It is also very easy to use, thanks to its adjustable gate voltage and gate-source voltage ranges.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDMC86116LZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 3.3A 8-M... |
FDMC8884-F126 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V PWR33N-Ch... |
FDMC2610 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 2.2A POW... |
FDMC86261P | ON Semicondu... | -- | 9 | MOSFET P-CH 150V 2.7A 8ML... |
FDMC8030 | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 40V 12A 8MLP... |
FDMC2514SDC | ON Semicondu... | -- | 1000 | MOSFET N-CH 25V 40A POWER... |
FDMC2512SDC | ON Semicondu... | 0.97 $ | 1000 | MOSFET N-CH 25V 32A 8PQFN... |
FDMC8360L | ON Semicondu... | -- | 3000 | MOSFET N-CH 40V 80A POWER... |
FDMC86248 | ON Semicondu... | -- | 1000 | MOSFET N CH 150V 3.4A POW... |
FDMC8010 | ON Semicondu... | -- | 87000 | MOSFET N-CH 30V 8-PQFNN-C... |
FDMC510P-F106 | ON Semicondu... | -- | 1000 | ST3 20V/8V PCH ERTRENP-Ch... |
FDMC0310AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 19A 8QFNN... |
FDMC7672S-F126 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30VN-Channel ... |
FDMC0205 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUIT |
FDMC7208S | ON Semicondu... | -- | 3000 | MOSFET 2N-CH 30V 12A/16A ... |
FDMC012N03 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30VN-Channel ... |
FDMC7660 | ON Semicondu... | -- | 520 | MOSFET N-CH 30V 20A 8-PQF... |
FDMC7572S | ON Semicondu... | -- | 1000 | MOSFET N-CH 25V 40A POWER... |
FDMC86102L | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 7A POWER... |
FDMC86570LET60 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 56A POWER... |
FDMC7678 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 17.5A 8ML... |
FDMC7692S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 8-MLPN-Ch... |
FDMC7692_F126 | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITN-Chann... |
FDMC86240 | ON Semicondu... | -- | 3000 | MOSFET N-CH 150V 16A POWE... |
FDMC86570L | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 56A POWER... |
FDMC8882 | ON Semicondu... | -- | 3000 | MOSFET N-CH 30V 8-MLPN-Ch... |
FDMC86102LZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 7A 8MLPN... |
FDMC2523P | ON Semicondu... | -- | 9000 | MOSFET P-CH 150V 3A MLP 3... |
FDMC7680 | ON Semicondu... | -- | 6000 | MOSFET N-CH 30V 8-MLPN-Ch... |
FDMC4435BZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 8.5A POWE... |
FDMC86139P | ON Semicondu... | -- | 1000 | MOSFET P-CH 100V 4.4A 8ML... |
FDMC8200S | ON Semicondu... | -- | 6000 | MOSFET 2N-CH 30V 6A/8.5A ... |
FDMC510P | ON Semicondu... | -- | 54000 | MOSFET P-CH 20V 18A 8-MLP... |
FDMC86259P | ON Semicondu... | -- | 1000 | MOSFET P-CH 150V 13A POWE... |
FDMC6675BZ-T | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUIT |
FDMC610P | ON Semicondu... | -- | 1000 | MOSFET P-CH 12V 80A POWER... |
FDMC86160 | ON Semicondu... | -- | 1000 | MOSFET N CH 100V 9A POWER... |
FDMC9430L-F085 | ON Semicondu... | 0.37 $ | 3000 | MOSFET 2 N-CHANNEL 40V 12... |
FDMC612PZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 8-MLPP-Ch... |
FDMC7582 | ON Semicondu... | -- | 1000 | MOSFET N-CH 25V 16.7A 8-P... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
