Allicdata Part #: | FDMC008N08C-ND |
Manufacturer Part#: |
FDMC008N08C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 80V 60A 8PQFN |
More Detail: | N-Channel 80V 60A (Tc) 57W (Tc) Surface Mount 8-PQ... |
DataSheet: | FDMC008N08C Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-PQFN (3.3x3.3), Power33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 40V |
Vgs (Max): | ±20V |
Series: | PowerTrench® |
Vgs(th) (Max) @ Id: | 4V @ 120µA |
Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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FDMC008N08C is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed primarily for powering applications in various parts of the electrical and electronics industry. This affordable, widely available component is an industry-standard part with a wide variety of applications and a variety of packing and pin-out options. This article provides an overview of the FDMC008N08C and its applications as well as an in-depth understanding of its working principle.
FDMC008N08C Overview
The FDMC008N08C is a single N-channel, 60 V, 8 A, 8 mΩ, Surface Mount MOSFET from ON Semiconductor. This transistor is available in Green Enhancement Mode packages and offers the convenience of operation in the current limited, high side switching applications. This device is ideal for low-side switching applications in consumer, industrial, and commercial electronics and is most widely used in automotive, telecommunications, and consumer electronics.
The FDMC008N08C offers benefits such as low on-resistance, superior RDS(ON) values, low gate charge and low gate-to-source capacitance. This transistor is manufactured using an advanced cell architecture and innovative designed copper interconnects, which provide superior switching performance. It features a high-speed switching action up to 1MHz, a breakdown voltage of 60 volts and an operating temperature range of -55 to 125°C.
Applications
The FDMC008N08C is perfectly suited for automotive, consumer and industrial applications, making it an ideal choice for many applications such as motor control, battery management and audio amplifier circuits. This has seen the FDMC008N08C feature in many products such as cellular phones, DVD players, consumer digital cameras, consumer audio-visual products, and Wi-Fi communication systems.
In automotive applications, the FDMC008N08C is used for switching power rails for DC/DC converters and LED lighting applications. It is commonly used in circuits for 4G mobile communications, GPS navigation systems, digital audio interfaces, and communications applications. In industrial settings, the FDMC008N08C is often used for low-side switching and as a down-converter for high side switching applications.
Working Principle
The FDMC008N08C is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled device, meaning that it operates differently depending on the voltage across its gate and channel. A positive voltage at the gate creates an electric field that the gate-channel junction, allowing current to flow between the drain and source. A negative voltage reduces the electric field and the transistor acts like an open switch, preventing current from flowing between the drain and source.
A key feature that sets the single N-channel MOSFET apart from other FETs is its low on-state resistance (RDS(ON)). This is due to the device\'s thin body and low capacitance, which helps it switch rapidly and reduces the amount of power it dissipates when in use.
The FDMC008N08C has low gate-to-source capacitance, allowing it to switch between on and off states quickly. This reduces switching losses and increases the efficiency of the system when used. Furthermore, the device has a low input capacitance, allowing it to draw less current. This helps reduce power supply requirements, making it ideal for battery powered systems.
Conclusion
The FDMC008N08C is a single N-channel MOSFET from ON Semiconductor, designed primarily for powering applications. This wide variety of packing and pin-out package offers flexibility for a variety of applications, from automotive and telecommunications to consumer electronics. The device has low on-resistance and low gate-to-source capacitance, which helps it switch between on and off states quickly and efficiently. Therefore, the FDMC008N08C is an ideal choice for many applications requiring power in the electrical and electronics industry.
The specific data is subject to PDF, and the above content is for reference
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