Allicdata Part #: | FDMC86265PTR-ND |
Manufacturer Part#: |
FDMC86265P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 150V 1A MLP |
More Detail: | P-Channel 150V 1A (Ta), 1.8A (Tc) 2.3W (Ta), 16W (... |
DataSheet: | FDMC86265P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 16W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 210pF @ 75V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta), 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC86265P is a single high-side floating power MOSFET transistor specifically designed for automotive applications. It is a 130V N-channel enhancement mode MOSFET that is suitable for use in liquid and vapor phase reflow soldering and conventional soldering. The unique floating gate construction of the FDMC86265P makes it ideal for applications where the gate voltage is higher than the supply voltage. This device uses an N-channel enhancement-mode architecture, which is well-suited for switching high-current loads.
The FDMC86265P’s application field is in the automotive industry where reliability, noise immunity, and power consumption are paramount. Popular applications are high side switch solutions, flyback solutions, high side DC/DC converters, and high side digital output protection circuits. It is also used in a variety of battery management systems and in applications that require a high amount of power handling. The device is available in a PowerSSO-12 package that has a low-profile body and a small footprint, making it ideal for automotive applications.
The working principle of the FDMC86265P is based on an N-channel enhancement-mode architecture. This architecture is the foundation of the MOSFET transistor, which makes it well-suited for switching high-current loads. The FDMC86265P features an advanced gate drive circuit that ensures that the power MOSFET will turn on quickly and with a low gate charge. As the gate voltage is higher than the supply voltage, the device will remain in the “on” state for as long as the gate voltage is applied. In addition, the FDMC86265P features a low RDS(ON) value, which minimizes current losses and improves efficiency.
The FDMC86265P is a very efficient device. It is designed to have a low total gate charge, which reduces switching losses and increases efficiency. The device also features a fast turn-on time, which helps to minimize switching time and minimize losses during switching. Additionally, the low gate charge of the FDMC86265P helps to reduce power consumption, which is important in automotive applications.
The FDMC86265P is a versatile device that is designed to handle high currents and power levels while providing efficient operation. It is ideal for a variety of automotive applications, such as high side switch solutions, flyback solutions, high side DC/DC converters, and high side digital output protection circuits. Additionally, it features an advanced gate drive circuit and a low RDS(ON) value for improved efficiency.The FDMC86265P is a single high-side floating power MOSFET transistor specifically designed for automotive applications.
The specific data is subject to PDF, and the above content is for reference
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