FDMC7696 Datasheet/PDFThe FDMC7696 is a single N-channel Silicon-Gate Power MOS technology enhancement mode Field Effect Transistor specifically designed for applications such as load switch, battery protection and audio switch. It is designed to suit various applications with its low on-resistance and fast switching speed.
The FDMC7696 is a vertical DMOS FET which combines the advantages of high-speed switching and low on-resistance with excellent body diode characteristics. It also has higher pollution immunity and lower thermal resistance than a P-channel MOSFET or a logic-level FET. With a maximum drain-source voltage of 30V, it is capable of blocking reverse voltage of up to 65V.
The working principle of the FDMC7696 is quite simple. An applied gate-source voltage increases the conductance between source and drain, resulting in a linear increase in drain current. Conversely, when the gate-source voltage is decreased below the threshold voltage, the drain current decreases. This current is referred to as leakage current.
The FDMC7696 is a highly robust component for load switch applications. Its low on-resistance and fast switching speed make it ideal for controlling current in high-powered systems. The component also has integrated protection circuitry built into the silicon die which prevents the device from being damaged by ESD or overvoltage. It is also capable of dissipating large amounts of power. These characteristics make the FDMC7696 ideally suited for use in digital power converters, high-frequency switching, and portable and industrial systems.
The FDMC7696 is also a robust component for audio switching applications. Its low on-resistance and fast switching speed makes it capable of driving a wide range of audio signals. Its excellent body diode characteristics also makes it ideal for blocking DC signals. These features make the FDMC7696 a suitable choice for use in audio power amplifiers and power switching applications.
The FDMC7696 is a highly reliable and efficient component for a wide range of applications. Its low on-resistance, fast switching speed, and excellent body diode characteristics make it ideal for use in load switch, battery protection, audio switch, and other applications that require efficient current control and excellent signal blocking capabilities.