FDMC8554 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-MLP (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 41W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3380pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	62nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	5 mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16.5A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDMC8554 Application Field and Working Principle

The FDMC8554 is a single-channel N-MOSFET featuring a maximumh drain-to-source voltage of 200 V, a minimum on-state current of 10 A, and a maximum on-state resistance (RDS(on)) of 10 mΩ. It is designed for low-side switch and load-switch applications in various DC/DC converters and automotive ADAS systems. This article will discuss the applications of the FDMC8554, as well as its working principle.

Applications of the FDMC8554

The FDMC8554 is primarily designed for load-switch and low-side switch applications in DC/DC converters, automotive ADAS (Advanced Driver Assistance System) systems, and other power management systems. It is especially suitable for applications where fast switching of large amounts of current is required, such as in automotive braking systems, which typically need to switch loads up to 10 A. It is also used in current-limiting systems in order to protect sensitive components from excessive current.

Working Principle of the FDMC8554

The FDMC8554 is an N-channel MOSFET, which is operated by the voltage applied to the gate terminal. When a positive voltage is applied to the gate terminal, an electric field is created between the source and drain, which creates a conductive channel between them. This allows current to flow from the source to the drain. When the voltage is removed, the electric field disappears and the channel closes, stopping current flow through the MOSFET.The FDMC8554 also features a maximum drain-to-source voltage of 200 V, which makes it suitable for high-voltage DC/DC converters and automotive ADAS systems. It also has a low on-state resistance (RDS(on)) of 10 mΩ, which allows it to minimize conduction losses when used in power management systems.

Conclusion

In conclusion, the FDMC8554 is a single-channel N-MOSFET that is used in load-switch and low-side switch applications in power management systems. It features a maximum drain-to-source voltage of 200 V and a maximum on-state resistance of 10 mΩ, which makes it suitable for high-voltage DC/DC converters and automotive ADAS systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description