Allicdata Part #: | FDMC3020DCTR-ND |
Manufacturer Part#: |
FDMC3020DC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 40A POWER33 |
More Detail: | N-Channel 30V 17A (Ta), 40A (Tc) 3W (Ta), 50W (Tc)... |
DataSheet: | FDMC3020DC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool ™ 33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1385pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 6.25 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC3020DC device is a dual N-Channel MOSFET operating at a maximum voltage of 30V and a drain-source current of 20A. It has been designed to be used in a variety of applications, making it a popular solution amongst engineers and technicians. The main advantage of this device is its low on-resistance and high current capability, making it ideal for high-voltage and high-current applications.
The FDMC3020DC is commonly used in DC-DC converter and motor control applications. In these applications, it is used to provide enhanced power switching performance, as well as improved efficiency. The device features inherent protection from shoot-through and reduced thermal stress, making it suited for applications that require highly reliable operation.
The FDMC3020DC also provides good electrical transparency when used in dual configurations. This allows for superior flexibility in system design and helps to deliver improved efficiency. The device’s high-speed switching characteristics also make it a viable solution for many DC treadmill applications.
The working principle of the FDMC3020DC is similar to other MOSFETs. The device is composed of two P-type and N-type semiconductor regions. When a voltage is applied to the gate terminal, it induces a current which attracts electrons from the substrate to the source region, thus creating a type of ‘channel’ of electrons, which allow current to flow readily through the MOSFET. This ‘channel’ of electrons is referred to as the ‘inversion channel’.
The FDMC3020DC is a junction-type MOSFET, which is slightly different from other MOSFETs. In a junction-type MOSFET, the source and drain are directly connected to the base and there is no need for an additional gate terminal. This makes the MOSFET less prone to damage, as the source and drain are already connected, preventing the need to add a separate gate terminal, which can be vulnerable to damage.
The FDMC3020DC is also equipped with an avalanche-rated drain, providing added protection to the device. The avalanche-rated drain helps to prevent catastrophic short-circuits, protecting the connected circuit and making the device even more suitable for high-voltage and high-current applications.
Overall, the FDMC3020DC is a robust device and a popular solution for high-voltage and high-current applications. It has a low on-resistance and high current capability, as well as inherent protection from shoot-through and reduced thermal stress. It also features an avalanche-rated drain and provides good electrical transparency when used in dual configurations. All these features make the FDMC3020DC a great choice for DC-DC converter and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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