FDMC8296

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-MLP (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.3W (Ta), 27W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1385pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC8296 is a type of metal-oxide-semiconductor field-effect transistor designed for high-current applications. It is widely used in power management and audio applications. In this article, we will discuss the FDMC8296 application field and working principle.The FDMC8296 is a high-power MOSFET that is capable of providing excellent electrical performance and reliability. It has a gate-drain breakdown voltage of 700V, an on-state resistance of 1.6 ohms, and a maximum on-state current rating of 28A. These characteristics make it ideal for high-power switching applications. It can be used in a wide range of applications, including power management, audio systems, HVAC systems, automotive power, and medical applications.The FDMC8296 is composed of a source, gate, and drain. Its source and drain are formed by metal electrodes, while its gate is formed by an oxide layer sandwiched between them. The FDMC8296 is designed to operate at a gate-source voltage of 2.5V to 12V and a drain-source voltage of up to 28V. It can be operated in either enhancement mode or depletion mode.The operation of the FDMC8296 can be understood by considering its working principle. In its normal operation, the drain-source voltage is applied across the source and drain electrodes. At the same time, a gate-source voltage is applied to the gate-source junction. As a result, majority carriers are injected into the oxide layer, creating a conducting channel between the source and drain. This conducting channel controls the current flow between the source and drain.When using the FDMC8296 in an application, it is important to understand the various characteristics and specifications. In addition to its normal operating characteristics, it is important to consider the body diode characteristics, continuous/discontinuous operations, and thermal resistance ratings. Additionally, it is important to understand the power dissipation ratings, maximum junction temperature ratings, and maximum power ratings.In conclusion, the FDMC8296 is a popular high-power MOSFET that is used for a variety of applications. It is composed of a source, gate, and drain and it operates at a gate-source voltage of 2.5V to 12V and a drain-source voltage of up to 28V. The FDMC8296 has a gate-drain breakdown voltage of 700V, an on-state resistance of 1.6 ohms, and a maximum on-state current rating of 28A. It is important to understand the various characteristics and specifications when using the FDMC8296 in an application.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description