FDMC15N06

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC15N06 is a 60V N-channel enhancement mode vertical double-diffused metal-oxide-semiconductor field-effect transistor (MOSFET) from Fairchild Semiconductor. It is able to withstand high power levels while controlling the current to a desired level.

Specifications

• Drain Source Voltage (Vdss): 60V
• Gate to Source Voltage (Vgs): 20V
• Drain Current (Id): 15A
• Maximum Drain Source On-State Resistance (Rds): 0.04 Ohms
• Transition Frequency (ft): 30 MHz
• Maximum Power Dissipation (Pd): 31 W
• Package: TO-220

Features

The FDMC15N06 offers a low on-resistance and low gate charge, which provide superior consumer performance. It is ideal for smaller and higher current applications. It also includes low gate charge and threshold voltage, together with low capacitance for fast switching speed. FDMC15N06 has the capability to deliver high performance in consumer and industrial applications.

Application Field

The FDMC15N06 is used in a wide range of consumer, industrial and automotive applications that require low on-resistance, high current switching and low threshold voltage. Some of these applications include DC–DC converters, motor control, active power factor correction, welding guns, appliance controls, refrigerator power supplies and traffic light control.

Working Principle

A MOSFET is an insulated gate transistor made of gate, source, and drain pins. The gate pin is used to control the level of current flowing through the source and drain pins. The gate pin is insulated from the source and drain pins by an oxide layer. This thin layer of silicon dioxide (SiO2) prevents current from flowing between the gate and source or gate and drain pins. When a voltage is applied to the gate pin, the gate insulator is increased and hence decreases the resistance of the MOSFET. This allows current to flow from the source to the drain pins. The level of current from source to drain is proportional to the voltage applied at the gate pin.

Advantages

The FDMC15N06 offers superior performance in consumer, industrial and automotive applications that require low on-resistance, high peak current and low threshold voltage. It contains a low gate charge and threshold voltage, which helps reduce switching losses and increase switching speeds. The low on-resistance of the FDMC15N06 also reduces heat dissipation while increasing the power density. Additionally, the FDMC15N06 is suitable for both high and low voltage applications.

Disadvantages

The FDMC15N06 is limited to a maximum drain-source voltage of 60V, which may limit its applications. Additionally, the temperature range of the FDMC15N06 is limited to -55oC to 150oC, which may not be suitable for extreme temperatures.

Conclusion

The FDMC15N06 is a 60V N-channel enhancement mode vertical double-diffused metal-oxide-semiconductor field-effect transistor (MOSFET) from Fairchild Semiconductor. The FDMC15N06 offers a low on-resistance and low gate charge, which provides an excelent performance in consumer, industrial, and automotive applications. It also contains a low gate charge and threshold voltage, together with low capacitance for fast switching speed. While the FDMC15N06 is limited to a maximum drain-source voltage of 60V, and a temperature range of -55oC to 150oC, it is still a powerful and reliable transistor that offers many advantages and can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference