FDMC010N08LC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC010N08LC is a power MOSFET from ON Semiconductor, especially designed for large load switching and high power switch mode applications. It is a N-channel low-Qg, high-Performance, ultra-low on-resistance (RDS (on)) MOSFET with a package size of 8mmx6mm. This high-density MOSFET device with a low gate charge and a low gate-source threshold voltage is ideal for portable, computer, and telecom applications.

In terms of its application field, the FDMC010N08LC is a power MOSFET often used in power management, motor control, and other power conversion applications. It also finds application in switching high-current or high-voltage loads. Typical applications of power MOSFETs are battery powered products, computers, UPSs, among others.

The FDMC010N08LC incorporates many electrical features such as an RDS(on) value of 10mΩ, a maximum drain-source voltage of 100V, and a maximum continuous drain current of 22A. Likewise, this MOSFET also offers a high-temperature operation capability of 175°C, as well as a low gate charge for reduced switching losses. Its current handling and switching frequency capabilities make it suitable for high current and high frequency applications. In addition, it features a low gate charge (18nC typical) to ensure fast switching performance, making it well-suited for battery powered applications.

In terms of its working principle, the FDMC010N08LC is a type of metal-oxide semiconductor field-effect transistor (MOSFET). MOSFETs are three-terminal voltage-controlled transistors used as one of the most produced and commonly used devices in the electronics industry. This type of transistor is also one of two types used in digital integrated circuits and they are mainly used as switching elements.

Essentially, the FDMC010N08LC works by relying on the idea of an induced electric field. When an electric field is applied between the drain and source terminals, the transistor switches on. The magnitude of the on-state drain-to-source resistance of the MOSFET is determined by the physical dimension of the device and by the voltage applied to its gate. The FDMC010N08LC MOSFET has an insulated gate, which enables it to provide much better performance than that of a regular BJT.

Moreover, the FDMC010N08LC features an ultra-low on-state resistance of 10 mΩ and a drain-source breakdown voltage of 100V. This is due to its high threshold voltage and high-end performance, making it the perfect choice for power supply and load switching applications. When off, it is characterized by extremely low leakage currents, and therefore less heat dissipation.

In conclusion, the FDMC010N08LC is a remarkably robust, low-Qg, low-RDS (on) power MOSFET designed for switching large loads. With its low gate charge and low gate-source threshold voltage, it is an ideal choice for portable, computer, and telecom applications. It also offers exceptional current handling and switching frequency capabilities, as well as a high temperature operation capability. The FDMC010N08LC MOSFET is designed to operate according to the principle of an induced electric field, enabling it to perform much better than regular BJTs.

The specific data is subject to PDF, and the above content is for reference