FDMC3612 Discrete Semiconductor Products

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The FDMC3612 is a dual N-channel enhancement-mode power MOSFET. It has a low on-resistance RDS(ON) of 36 mΩ Max and integrated Schottky Diode, this MOSFET offers an optimized solution for demanding high efficiency power supply design.

It is designed to enable Power Management Applications such as AC/DC Adaptors, Chargers, and DC/DC Converters.

The Mosfet FDMC3612 is an enhancement mode MOS field-effect transistor (MOSFET). It has a drain-source voltage (VDS) rating of 40V, a Source-Drain Diode that has an on-state voltage (VSD) rating of 50mV, a drain current (ID) rating of 15A, and a gate-source voltage (VGS) rating of ±12V.

The drain of the Mosfet features an integrated Schottky diode, allowing for less space in power handling applications. The Schottky diode has a forward voltage rating of 414mV and a peak reverse current of 130nA.

VDMC3612’s application field includes power management applications such as AC/DC adapters, chargers, and DC/DC converters. Due to its low on-resistance (RDSon) of 36mΩ Max and its integrated Schottky diode, the Mosfet FDMC3612 is an optimized solution for demanding high efficiency power supply designs.

The working principle of a MOSFET is the same as a bipolar junction transistor (BJT). In a bipolar junction transistor, electric current flows from the base to the collector and out the emitter. A MOSFET works in much the same way, except that electric current does not flow from the gate to the source and out the drain. Instead, the gate voltage controls the voltage between the source and the drain.

The FDMC3612 can be easily applied to both high side and low side switching circuits. When the voltage of the gate is higher than the threshold voltage of the MOSFET, electric current begins to flow and it behaves as an open switch. As the electric current flows through the MOSFET, gate-source capacitance CGS and gate-drain capacitance CGD cause electrical noise and parasitic capacitance that can impact the efficiency of the switching system. To reduce electrical noise, the body diode has been integrated with the drain, which helps reduce switching resistance and capacitor disturbances.

The FDMC3612 features a low on-resistance RDS(ON) of 36 mΩ Max, making it well suited for demanding high efficiency power supply designs as it has lower switching loss. The integrated Schottky Diode ensures a low on-state voltage and lower EMI radiation, while the advanced process technology helps reduce switching resistance and parasitic capacitance.

The FDMC3612 is an excellent dual N-channel enhancement-mode power MOSFET, due to its low on-resistance, integrated Schottky diode, and optimized design for power management applications. It is a great choice for AC/DC adapters, chargers, and DC/DC converters, as it is designed to enable high efficiency and lower power consumption.

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