FDMC86116LZ

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The FDMC86116LZ is a single-channel N-type enhancement-mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is one of the latest products from the ON Semiconductor’s FDMC8600 family of MOSFETs.

This MOSFET is designed to withstand highest voltage levels and current densities. It has an output voltage capability up to 85V and a tolerable current of 5A. Its structure includes an integrate substrate and the anode bonding wire that isolates it.

The FDMC86116LZ is an innovative device that has many features such as low Rds(on), low gate charge, an efficient ESD protection circuit and excellent silicon. As a result, it is often used in various applications such as motor control, white goods, industrial equipment, DC-DC converters and power electronics.

The FDMC86116LZ is an N-channel device which means it can only be used with negative voltage. It has an on resistance of 0.165 Ohm and a maximum drain current of 5A. The Vgs range for this device is -4V to +12V. The maximum allowable power dissipation for this device is 25W.

When it comes to its working principle, the FDMC86116LZ is a 4-pin device. It has an anode, cathode, gate and substrate pin. The operation of this device occurs when the gate voltage is applied. This device is controlled by gate bias voltage. The gate voltage between gate and source modulates the channel width in the semiconductor substrate.

As a result, charge carriers can move from source to drain region. Depending on the magnitude of gate voltage, the on-resistance of this device can be varied. The FDMC86116LZ utilizes a true complementary MOSFET process that helps in improving current carrying capacity, providing a low on resistance and improving switching speed.

The FDMC86116LZ is ideal for applications such as DC-DC converters and power electronics where efficient transfer of heat is required. It can be used for motor control and white goods such as refrigerator and washing machines where a fast and smooth switching speed for controlling the current flow is required.

In conclusion, the FDMC86116LZ is an advanced single-channel N-type enhancement-mode MOSFET with features such as excellent silicon, low Rds(on), low gate charge and ESD protection. It is suitable for various applications such as motor control, white goods, industrial equipment, DC-DC converters and power electronics. The on resistance and current carrying capacity of this device can be varied depending on the magnitude of the gate voltage.

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