FDMC86262P Allicdata Electronics

FDMC86262P Discrete Semiconductor Products

Allicdata Part #:

FDMC86262PTR-ND

Manufacturer Part#:

FDMC86262P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 150V 2A POWER33
More Detail: P-Channel 150V 2A (Ta), 8.4A (Tc) 2.3W (Ta), 40W (...
DataSheet: FDMC86262P datasheetFDMC86262P Datasheet/PDF
Quantity: 24000
Stock 24000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 75V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 307 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A Field Effect Transistor (FET) is a semiconductor device that is used to control the flow of a current. The FDMC86262P is a single-gate FET that is used for a variety of applications. In this article, we will take a look at the FDMC86262P application field and working principle.

Types of FETs

Field Effect Transistors (FETs) are divided into two general categories, depletion mode FETs and enhancement mode FETs. The FDMC86262P is a depletion mode FET, which means that when a negative voltage is applied to the gate, the conduction channel is reduced. Conversely, an enhancement mode FET will increase the conduction channel when a positive voltage is applied to the gate.

FDMC86262P Application Field

The FDMC86262P is used for a variety of applications. Some of the most common applications for the FDMC86262P include:

  • Switch Mode Power Supplies (SMPS)
  • Motor control
  • Battery management circuits
  • Power amplifiers

The FDMC86262P is typically used in low-power applications where low on-resistance is important. The low on-resistance of the FDMC86262P allows for low power dissipation in applications where low current is required. The low resistance also allows for faster switching speeds in motor control applications.

FDMC86262P Working Principle

The FDMC86262P is a single-gate FET, which means that it has one metal-oxide semiconductor (MOS) field effect channel that is controllable by a gate voltage. The channel of the FET is controlled by the application of a voltage to the gate, which then varies the effective resistance between the source and the drain. When a positive voltage is applied to the gate, the resistance is increased, which results in a decrease in current flow. Conversely, when a negative voltage is applied to the gate, the resistance is reduced which results in an increase in current flow.

The FDMC86262P is a depletion mode FET, which means that when a negative voltage is applied to the gate, the conduction channel is reduced, resulting in a decrease in current flow. This can be useful in applications where a low current is required such as motor control and battery management circuits.

The FDMC86262P also has a very low on-resistance, which means that the power consumption is much lower than other FETs with the same current capability. This makes the FDMC86262P ideal for low power applications such as switch mode power supplies and power amplifiers.

Conclusion

The FDMC86262P is a single-gate depletion mode FET that is used for a variety of low power applications. The low on-resistance of the FDMC86262P allows for low power dissipation, while the depletion mode allows for a reduction in current flow when a negative voltage is applied to the gate. The FDMC86262P is ideal for applications such as switch mode power supplies, motor control, battery management circuits, and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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