FDMC7692_F126

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The FDMC7692_F126 is a single N-channel enhancement-mode Field Effect Transistor (FET) designed to address the needs of equipment manufacturers. It is well suited to be the primary switch in a wide variety of applications, including boosted regulation and load switch in a mobile phone. The F126 version is designed with a low on-resistance of 6.5mΩ, making it suitable for mobile applications. It is capable of switching up to a rated current of 12A. It is equipped with built-in ESD protection to ensure it is resistant to common voltage spikes.

Application Field

The FDMC7692_F126 is designed for digital switching applications and is suitable for use in portable devices such as mobile phones and tablets. It is used as the primary switch in such applications to provide digital switching control. In addition to its use as a primary switch in switched digital power regulation circuits, the device also has a high operating temperature range, up to 175°C. This makes it well suited for use in automotive applications. For applications where a low on-resistance value is important, the F126 version of the device can provide an attractive solution.

Working Principle

The FDMC7692_F126 is a single N-channel enhancement-mode MOSFET. It consists of an insulated-gate FET (IGFET) with an N-channel body and source connected to the substrate. The gate is connected to an insulated gate and an N-channel body is formed beneath the gate. The source and body are connected to the substrate and so form the source and drain connections. When a positive voltage is applied to the gate in relation to the source, current is allowed to flow from the source to the drain. This is known as the ‘on’ state of the device. When the gate voltage is reversed, the drain is connected to the source and the current flow is blocked. This is known as the ‘off’ state. The combination of the voltage applied to the gate in relation to the source and the resistance of the body determines the amount of current that can flow through the device.

In addition to its use in switched digital power regulation circuits, the device also has a low on-resistance of 6.5mΩ making it suitable for mobile applications. It is also capable of switching up to a rated current of 12A. The device has a high operating temperature range of -55°C to 175°C, making it suitable for a variety of applications, including those in the automotive industry. Additionally, the FDMC7692_F126 is equipped with built-in ESD protection to ensure it is resistant to common voltage spikes.

The FDMC7692_F126 N-channel MOSFET is designed to meet the needs of equipment manufacturers looking for a reliable, efficient and cost-effective switching solution. Its low on-resistance ensures it can provide optimal performance in power control applications, while its high operating temperature range and built-in ESD protection make it suitable for a wide range of applications. Furthermore, its low power consumption, robust construction and wide voltage range from 4.5V to 22V make it the ideal choice for digital power regulation circuits.

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