FDMC7672S Allicdata Electronics
Allicdata Part #:

FDMC7672STR-ND

Manufacturer Part#:

FDMC7672S

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 8-MLP
More Detail: N-Channel 30V 14.8A (Ta), 18A (Tc) 2.3W (Ta), 36W ...
DataSheet: FDMC7672S datasheetFDMC7672S Datasheet/PDF
Quantity: 1000
1 +: $ 0.23200
10 +: $ 0.22504
100 +: $ 0.22040
1000 +: $ 0.21576
10000 +: $ 0.20880
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC7672S is a high-performance Double Step-in Gate MOSFET. It is designed specifically for high-power applications in the automotive industry, where high-frequency pulses of varying current requirements are the norm. The integrated gate design reduces power consumption and minimizes gate resistance for superior gate drive performance. The FDMC7672S is a high-voltage device with a rated drain-source breakdown voltage of 600V and a max. gate-source voltage of ±20V. The integrated thermal-resistant substrate significantly increases the power efficiency and provides reliable operation, even under extreme environmental conditions.

FDMC7672S application field mainly focuses on the automotive field. It can be used in automotive power electronics for motor and generator control, load switching and rectification, and high-voltage switching applications such as headlights and power control units. It can also be used in consumer electronics such as mobile phones and portable electronic devices. Furthermore, FDMC7672S can be used in lighting applications, such as LED lighting and solid-state lighting products.

In addition, the FDMC7672S can also be used in industrial and agricultural applications, such as motor control, stepper motor control, and agricultural motor drives. The FDMC7672S also has high-voltage transient protection and is capable of working in extreme temperatures, making it an ideal device for HVAC systems.

The FDMC7672S works on high-side drive configuration, it\'s based on a double-step gate concept, on which both the top and bottom gates are connected together allowing to rapid flow of the current. The enhanced gate drive performance of this type of MOSFET makes it suitable for high-power automotive and industrial applications. The gate-source voltage of the FDMC7672S is capable of switching at relatively high frequencies, further increasing its performance in power applications requiring fast and accurate switching.

The FDMC7672S features integrated temperature-resistant substrate and low R DS(ON) for higher efficiency in power applications. The device also features integrated integrated gate protection and ESD protection, reducing the risk of device failure and ensuring reliable operation. Furthermore, the FDMC7672S can be externally clamped up to 700V for further safety and robustness.

In conclusion, the FDMC7672S is an ideal choice for high-performance automotive, industrial, and agricultural applications. With its high accuracy, fast switching, and high-voltage protection, it is the perfect device for demanding applications requiring precision and reliability.

The specific data is subject to PDF, and the above content is for reference

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