FDMS3615S

The FDMS3615S is an array of four N-channel, depletion-mode, MOSFET power transistors that are typically used in various consumer electronics. With its low on-resistance, minimum drain-source voltage, and minimum gate-source voltage, the FDMS3615S is an ideal choice for applications that require a small amount of power, such as small motors and relays. In addition to its low power consumption, the FDMS3615S is capable of withstanding temperatures of up to 175 degrees Celsius and has a maximum gate-drain junction voltage of 80 volts. Its maximum effective current gain is approximately 45,000 and its maximum DC current is 12 amps. The package size is 4.1mm x 10mm. The FDMS3615S is designed for use in applications where power losses are minimal, such as those found in consumer electronics. Its low gate threshold voltage and low Gate-to-Drain breakdown voltage offer superior device performance in these applications. The relatively small gates also allow for smaller devices, which reduces the overall cost and complexity of the device. These transistors are often used in high-current applications such as power supplies and relay circuits. They are also used in automotive, consumer, and industrial electronic applications. At its core, the FDMS3615S is an array of four N-channel MOSFET transistors. They are all comparable in size, with each transistor having a source-drain distance of 10mm. The source and drain terminals are connected to the gate, and the gate is connected to external circuitry. The transistor\'s Gate-Source voltage is typically in the range of 15 to 20 volts, while the Drain-Source voltage is typically around 30 volts. The transistors are packaged in a 4.1mm x 10mm and have a maximum Gate-to-Drain junction voltage of 80 volts. When the gate voltage rises above the Gate-Source voltage, the MOSFET is triggered, and it becomes an ON state. When the Gate voltage is lower than the Gate-Source voltage, the MOSFET is in an OFF state. This is called the channel depletion mode. In this mode, the Gate-Source voltage must be low enough to allow the channel depletion to occur. The FDMS3615S offers superior performance at low Gate-Source voltages, allowing for faster switching times and lower power dissipation. The FDMS3615S also offers excellent temperature performance, enabling the device to operate in extreme temperatures. Its maximum Drain-Source voltage of 30 volts and maximum Gate-Source voltage of 20 volts provide better protection against voltage spikes and transient events. Its Gate-to-Drain junction voltage of 80 volts provides superior protection against electrostatic discharge.In summary, the FDMS3615S is an array of four N-channel, depletion-mode MOSFET power transistors with minimum on-resistance, very low Gate-Source voltage and Drain-Source voltage, and superior temperature performance. It is an ideal choice for applications such as power supplies, avalanche sensing, and relay operation. Its tiny 4.1mm x 10mm package size offers a cost effective solution for high-current applications that require a small package size and minimal power losses.

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FDMS9410L-F085	ON Semicondu...	0.4 $	1000	MOSFET N-CH 40V 50A POWER...
FDMS86540	ON Semicondu...	--	1000	MOSFET N-CH 60V 20A 8-PQF...
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FDMS2734	ON Semicondu...	--	1000	MOSFET N-CH 250V 2.8A POW...
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FDMS0309AS_SN00347	ON Semicondu...	0.0 $	1000	MOSFET N-CHN-Channel 30V ...
FDMS039N08B	ON Semicondu...	--	1000	MOSFET N-CH 80V 19.4A POW...
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FDMS0346	ON Semicondu...	--	1000	INTEGRATED CIRCUIT
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FDMS8020	ON Semicondu...	--	1000	MOSFET N-CH 30V 26A 8-PQF...
FDMS86322	ON Semicondu...	--	1000	MOSFET N-CH 80V 60A LL PO...
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