Allicdata Part #: | FDMS86310TR-ND |
Manufacturer Part#: |
FDMS86310 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 17A 8-PQFN |
More Detail: | N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (T... |
DataSheet: | FDMS86310 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6290pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS86310 is a single, N-Channel depletion mode MOSFET with a high-drain current rating and low-voltage level rating which makes it a suitable driver for various power switch applications. It is suitable for high-to-low level translation applications in both digital and analog circuits.
Application Field
The FDMS86310 is most suitable for switch mode application requirements such as Pulse Width Modulation (PWM) drivers, DC motor control, driving a wide variety of power transistors, high-efficiency power switch circuits and high frequency switch control. This MOSFET can also be used for applications such as low-level signal switching, LED and AC/DC voltage switch controls, as well as Darlington Transistor replacement.
Working Principle
The FDMS86310 is a depletion mode MOSFET, and works by allowing current to flow through its channel only when a negative voltage is applied to the gate terminal. In other words, the MOSFET is turned “ON” and current flows when the gate terminal is more negative than the source terminal. When the gate voltage is more positive than the source voltage, the MOSFET is turned “OFF” and no current flows. As such, the MOSFET can be used to switch current on and off in various power switch applications.
When the voltage applied to the gate terminal is less than the threshold voltage, the transistor turns “OFF” no matter how much the drain current increases. This provides very stable, low timing or turn-off delay in the application, as well as low power consumption when the switch is off. This makes the FDMS86310 an ideal choice for power switch applications.
The FDMS86310 is designed to have a high-drain current rating and a low-voltage level rating. This makes it suitable for a wide variety of power MOSFET applications such as pulse-width modulation (PWM) drivers, LED controllers, high intrinsic breakdown voltage, and low on-resistance. These features make this device suitable for power switch applications.
Furthermore, the FDMS86310 boasts of excellent thermal characteristics due its high current ratings coupled with its power rating can handle high power applications. This makes it suitable for applications that require high current and high power.
The FDMS86310 is also designed with a low on-resistance and low gate-source leakage current which limits power loss in the device while operating in high-to-low level translation applications. This makes it very efficient in digital and analog applications. Furthermore, the device also features dual PIN terminals which provide robust connections for increased reliability.
All in all, the FDMS86310 is a great choice for a wide variety of high-performance, reliable power switch applications. With its offering of high-drain current rating, low-voltage level rating, and low on-resistance, this device is very efficient, reliable, and suited for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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