FDMS86500DC Allicdata Electronics
Allicdata Part #:

FDMS86500DCFSTR-ND

Manufacturer Part#:

FDMS86500DC

Price: $ 1.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N CH 60V 29A 8-PQFN
More Detail: N-Channel 60V 29A (Ta), 108A (Tc) 3.2W (Ta), 125W ...
DataSheet: FDMS86500DC datasheetFDMS86500DC Datasheet/PDF
Quantity: 1000
1 +: $ 1.12000
10 +: $ 1.08640
100 +: $ 1.06400
1000 +: $ 1.04160
10000 +: $ 1.00800
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: Dual Cool™56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Series: Dual Cool™, PowerTrench®
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS86500DC is a 60V N-channel Enhanced Single-Pulse/Soft-Switching MOSFET that is designed to work in automotive, industrial, and consumer applications. This component integrates many features which make it well designed for use in environments where there are wide variances in temperature and voltage conditions. Additionally, the component can operate at frequencies up to 25MHz, and contains a low-threshold feature, making it suitable for use in high-speed switching applications.The FDMS86500DC is a part of a series of MOSFET transistors featuring an enhanced single-pulse/soft-switching capability. The component enables efficient power control in a wide range of applications, by offering an superior soft switching performance compared to a simpler single-switch device. The component is comprised of many features and technologies that not only increase efficiency, but also reduce size and boost overall performance.Applications for the FDMS86500DC include industrial inverters, motor drives, broadcast systems, and computer systems. In inverters and motor drives, the component is used to ensure the efficiency of the power being supplied to the motor is optimized and it provides smooth operation during high-speed, high torque operations. It is also used in broadcast systems to provide power conversion and control, allowing for seamless and accurate control over volume, tone, and other parameters. The component is also ideal for computer systems as it can provide soft switching with minimal distortion.The working principle of the FDMS86500DC MOSFET is based on an asymmetric charge-base design, which reduces the switching losses and allows for a soft switching topology. This technology also enables the component to quickly respond to changes in voltage and current, and also reduces the noise produced during switching processes. Additionally, the component features a low-threshold voltage to ensure switching stability and increased efficiency. The FDMS86500DC has a rated voltage of 60V and a peak drain-source voltage of 80V. It also has a low threshold voltage of 0.1V, making it suitable for high-speed switching applications. Additionally, the component has a maximum drain-source voltage of 2.4V and a drain current of 0.5A. The component has a low gate-source capacitance of 0.018nF, ensuring it is suitable for fast switching operations. The power dissipation of this component is also relatively low, as it has a thermal resistance of 8.5°C/W.In conclusion, the FDMS86500DC is a well-designed component with many features that make it suitable for use in a variety of industrial and consumer applications. Its soft-switching topology allows for efficient control of power and its low-threshold voltage ensures stability and improved performance. Its wide range of features makes it suitable for use in high-speed switching applications, as it offers a low gate-source capacitance and a relatively low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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