| Allicdata Part #: | FDMS8570SDCTR-ND |
| Manufacturer Part#: |
FDMS8570SDC |
| Price: | $ 1.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 28A PQFN |
| More Detail: | N-Channel 25V 28A (Ta), 60A (Tc) 3.3W (Ta), 59W (T... |
| DataSheet: | FDMS8570SDC Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.99153 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Dual Cool™56 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.3W (Ta), 59W (Tc) |
| FET Feature: | Schottky Diode (Body) |
| Input Capacitance (Ciss) (Max) @ Vds: | 2825pF @ 13V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | PowerTrench®, SyncFET™ |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 28A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 60A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
<h2> Introduction </h2>The FDMS8570SDC is a transistor, more specifically a Field Effect Transistor (FET). FETs are one of the simplest yet most powerful and versatile types of transistors available and are used in a variety of applications, from communications and power control to audio amplification or video processing. The FDMS8570SDC is a single FET, meaning that it can be used in circuits where only one such transistor is required. <h2> FDMS8570SDC Application </h2>The FDMS8570SDC is a small signal FET, used mainly in analog circuits that require low to moderate power. The device can be used in a variety of applications including amplifiers, switching circuits, delay lines, and as a variable resistor. One popular application of the FDMS8570SDC is as a low-noise amplifier for audio applications, as it has a low noise figure and can provide stable, low-distortion gain. The device is also suitable for use in motor control, where its high input impedance and high breakdown voltage make it ideal for controlling the speed and direction of a DC motor. The FDMS8570SDC is often used as a switching element in security systems and can be used to convert analog signals to digital signals for use in microcontroller circuits.<h2> FDMS8570SDC Working Principle </h2>The FDMS8570SDC is a two-terminal device with a gate, drain and source. The operation of the device is based on the principle of the “Bulk Injection” of mobile charge carriers.When a positive voltage is applied to the gate terminal, electrons will be attracted to the surface of the semiconductor substrate and cause a “conduction channel” to be formed between the drain and source terminal. This “channel” conducts electricity through the drain and source terminal, as long as a certain voltage (the gate voltage) is applied to the gate terminal.As the gate voltage increases, more electrons will be injected into the substrate and the drain-to-source current will increase. Conversely, when the gate voltage decreases, the number of electrons in the substrate decreases, reducing the amount of current that can flow between the drain and source terminals.<h2> Summary </h2>The FDMS8570SDC is a single FET, used mainly in analog circuits for low to moderate power applications. It is used for a wide range of applications, from audio amplification to motor control to microcontroller circuits. The operation of the device is based on the principle of “Bulk Injection” of mobile charge carriers, which allows the device to control the current between its drain and source terminals in response to changes in the gate voltage.The specific data is subject to PDF, and the above content is for reference
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FDMS8570SDC Datasheet/PDF