Allicdata Part #: | FDMS7556STR-ND |
Manufacturer Part#: |
FDMS7556S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 35A POWER56 |
More Detail: | N-Channel 25V 35A (Ta), 49A (Tc) 2.5W (Ta), 96W (T... |
DataSheet: | FDMS7556S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8965pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 133nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta), 49A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS7556S is a high-voltage N-channel MOSFET designed for use in power management and dc-to-dc conversion applications. It is an ideal choice for applications where low leakage, low gate charge and high drain-source voltage ratings are needed. As a single-stage device, the FDMS7556S operates at high switching frequencies, making it ideal for power supply and other power conversion applications.
The FDMS7556S is supplied in both a TO-252 (D-Pak) and TO-220 packages. The device is housed in an industry standard package size, making it easy to integrate into existing circuit designs. The device is designed for the highest efficiency and the lowest possible power dissipation. It is ideal for use in battery powered systems or other energy-efficient designs.
The FDMS7556S uses an N-channel MOSFET for switching operation. The drain-source voltage (VDS) is rated up to 60 volts, and the breakdown voltage (BVDSS) is rated as low as 400 volts. The on-state resistance (RDS(on)) is rated as low as 7.5 milliOhms with a maximum drain current (ID) rating of 12 amps. The MOSFET can handle a large number of switching cycles and is immune to transistor action. The FDMS7556S also offers an impressive power dissipation rating of 625 milliWatts per channel.
The FDMS7556S is an ENHANCE-capable device, allowing it to allow more efficient operation at lower gate voltage, resulting in lower total power dissipation. The FDMS7556S is designed to operate in PWM (pulse width modulation) mode, ensuring the best possible switching performance. The device can also be used in a multi-stage configuration, allowing it to work in more complex applications. Additionally, the FDMS7556S is capable of operating over a wide temperature range (-55°C to 150°C).
The FDMS7556S is an outstanding choice for a wide variety of dc-to-dc converters, power supply designs, and other power conversion applications. Due to its impressive performance characteristics and ENHANCE capability, the FDMS7556S is a highly desirable solution for energy-efficient design initiatives. The device is easy to integrate into existing designs, and can handle the most demanding switching requirements and conditions. With its ratings and features, the FDMS7556S is an excellent choice for all your power management needs.
The specific data is subject to PDF, and the above content is for reference
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