FDMS86200DC Discrete Semiconductor Products |
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Allicdata Part #: | FDMS86200DCTR-ND |
Manufacturer Part#: |
FDMS86200DC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 9.3A POWER 56 |
More Detail: | N-Channel 150V 9.3A (Ta), 28A (Tc) 3.2W (Ta), 125W... |
DataSheet: | FDMS86200DC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool™56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2955pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.3A (Ta), 28A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS86200DC is a high-voltage, high-frequency MOSFET with an inherently low on-resistance. It is used in a variety of switch mode power supply (SMPS) applications, like Biosensors, solar energy systems, security systems, energy management systems, and many industrial applications. It is also suitable for driving high-current relays, capacitors, loudspeakers, motors, and other similar loads.
The FDMS86200DC is a Single-High Voltage Machine (SHVM) MOSFET that is designed to be robust, reliable, and cost-effective. It is an excellent choice for applications requiring high-current switching such as solar power or other industrial applications. It is rated for up to 200 amps at 200 volts. It has a maximum gate-source voltage rating of +/- 20 volts and a total gate charge of 175 nanoseconds.
Due to its low on-resistance, the FDMS86200DC MOSFET operates at low temperatures and allows a high level of efficiency in components such as SMPS modules and drivers. Its low gate-drain charge also allows the FDMS86200DC to be used in applications where a low input current is needed. It has a maximum total gate charge of 175 nanoseconds and a maximum gate-source breakdown voltage of 200 volts.
The working principle of the FDMS86200DC MOSFET is based on the Field-effect Transistor (FET). It is a three-terminal device in which current flows from the Drain terminal to the Source terminal when an electric field is applied between the Gate and Source terminals. This electric field forces electrons from the Source terminal to the Drain terminal, causing a current flow. As this current flows, it induces a voltage drop across the Drain-Source terminal. The FDMS86200DC MOSFET is designed to operate within this voltage drop, allowing it to switch high-currents efficiently.
The FDMS86200DC MOSFET can be used as an electronic switch in many different electronic circuits. It is often used to switch a high-current load, such as a motor, in an efficient and cost-effective manner. It can also be used to control voltage in SMPS modules, as well as the current in an LED. In addition, the strong high-voltage SwitchSOI technology used in the FDMS86200DC allows the MOSFET to be operated in high-temperature environments and consistently supplies high-currents with ease.
The FDMS86200DC MOSFET is a very useful and versatile device, allowing high-currents to be switched efficiently in a cost-effective manner. Its robustness and reliability make it an ideal choice for a variety of applications, including solar power, Biosensors, motor controllers, audio amplifier switching, and more. Its low total gate charge and capability to operate at a low temperature make it a great choice for powering high-current loads such as motors and capacitors, as well as providing input current to lower voltages.
The specific data is subject to PDF, and the above content is for reference
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