Allicdata Part #: | FDMS3006SDCTR-ND |
Manufacturer Part#: |
FDMS3006SDC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 34A 8-PQFN |
More Detail: | N-Channel 30V 34A (Ta) 3.3W (Ta), 89W (Tc) Surface... |
DataSheet: | FDMS3006SDC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Dual Cool™56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5725pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | Dual Cool™, PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS3006SDC is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is used for many applications. It is a highly compact device, with a total gate length of 6.3mm and a width of 2.8mm, making it well suited for applications that require a high degree of integration. The FDMS3006SDC features particularly low power dissipation, making it an excellent choice for applications where power management is of paramount concern.
The FDMS3006SDC is primarily used in power management and conversion applications, such as switching power supplies, DC/DC converters, motor drives, and other systems that require high efficiency and low power dissipation. It is also suitable for high-side switching applications, where it offers protection against negative bias temperature instability and improved transients. As a low-gate capacitance MOSFET, it provides superb switching characteristics and minimal switching loss, making it well suited for high frequency applications.
The FDMS3006SDC is a voltage-controlled device that operates according to the MOSFET’s intrinsic behavior. It is composed of three basic components: a semiconductor(Silicon), a source and drain contact, and a gate. When a voltage is applied to the gate, a depletion layer is created that modulates the current flowing between the source and drain contacts. This modulation is what allows the MOSFET to serve as a switch, allowing current to flow in one direction or blocking it in the other.
The FDMS3006SDC is designed to be used as either an enhancement mode MOSFET (E-MOSFET) or depletion mode MOSFET (D-MOSFET), depending on how it is wired. The E-MOSFET is normally turned off and can be switched on with a voltage applied across the gate and drain. The D-MOSFET is normally turned on and can be switched off by applying a voltage across the gate and source. As a result, the FDMS3006SDC can be used in both high-side and low-side switching applications.
The FDMS3006SDC has a maximum drain-source blocking voltage of 30 Volts, making it suitable for applications where high voltage blocking is required. It also has an integrated internal gate-drain and gate-source zeners, making it able to protect against gate-source overvoltage in many common applications. In addition, it has a total gate charge of 3nC, making it ideal for applications that require a low input capacitance.
The FDMS3006SDC is an excellent choice for many power management and conversion applications due to its high switching speed, wide temperature range, and low drain-source on-resistance. Its high reliability and exceptional thermal characteristics also make it well suited for systems where high workloads or extreme temperatures are present. Its low input capacitance and integrated protection devices make it ideal for applications with high voltages or high rates of change.
Overall, the FDMS3006SDC is an excellent choice for many different types of power management and conversion applications where high efficiency, low power dissipation, and an integrated protective design are of paramount concern. Its small size and high reliability make it well suited for applications that require a high degree of integration, while its wide temperature range and exceptional switching characteristics are perfect for applications where high workloads or extreme temperatures are present.
The specific data is subject to PDF, and the above content is for reference
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