Allicdata Part #: | FDMS0306S-ND |
Manufacturer Part#: |
FDMS0306S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | |
DataSheet: | FDMS0306S Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Obsolete |
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The FDMS0306S is a monolithic n-channel enhancement-mode power MOSFET featuring ultra-low on-resistance. As such, it is ideal for use as a main power switch in a variety of switching supplies and other high-power DC/DC converters. It is also used in ultra-efficient power controllers and to replace circuits previously built with discreet components.
The FDMS0306S is a single-polarity MOSFET capable of controlling up to 80V and 30A. It is capable of sustaining a blocking voltage of 600V, and has a very low Miller capacitance. In addition, its SO-8 package not only reduces circuit board space requirements, but also enhances heat dissipation to make it suitable for high-power applications.
The FDMS0306S provides several features for reliability, durability, and safety. It has a built-in ESD protection function, and provides protection against over-voltage conditions. It has over-current protection, over-temperature protection, thermal shutdown, and a built-in soft-starting circuit.
The FDMS0306S is capable of extremely high-efficiency operation due to its low power loss during operation. This is because its low direct on-resistance (Rdson) allows it to dissipate much less power than other transistors. Its maximum Rdson rating is 2.5mΩ.
In terms of its working principle, the FDMS0306S operates on the principle of voltage control. When a voltage is applied to its gate terminal, it switches ON, and when the voltage is removed, it switches OFF. This is because of its n-channel structure; when a voltage is applied to the gate terminal, it creates an electric field which causes the electrons at the source to move towards the drain. This in turn creates a channel for current to flow between the source and the drain.
The FDMS0306S is most often used for high-power and high-voltage applications, such as switching power supplies, DC/DC converters, and other power control applications. It is also used to replace circuits with multiple components, such as switching transistors and logic elements, to reduce size and cost.
The FDMS0306S is a monolithic n-channel enhancement-mode power MOSFET. It has a low Rdson, and is capable of extremely high-efficiency operation. It is ideal for use in high-power and high-voltage applications such as switching power supplies, DC/DC converters, and other power control applications. In addition, its SO-8 package not only reduces circuit board space requirements, but also enhances heat dissipation to make it suitable for higher power applications. Its low Rdson allows it to dissipate much less power than other transistors, and it has a number of safety and protection functions to ensure reliable and long-lasting performance.
The specific data is subject to PDF, and the above content is for reference
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