Allicdata Part #: | FDMS86255ET150TR-ND |
Manufacturer Part#: |
FDMS86255ET150 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V POWER56 |
More Detail: | N-Channel 150V 10A (Ta), 63A (Tc) 3.3W (Ta), 136W ... |
DataSheet: | FDMS86255ET150 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4480pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 63A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDMS86255ET150 is a type of a Field-Effect Transistor, more commonly known as FETs. They are transistors that use an electric field to modify the flow of current. It is a single N-Channel MOSFET, a transistor that uses a gate to control current flow. The FDMS86255ET 150 is designed for applications from 0.45 to 6 volts and is suitable for a variety of motor control, signal processing, and high speed switching applications. Manufactured by Microchip Tech, it is specifically designed to minimize the exchange current and voltage overshoot while providing an isolation barrier to ensure that isolated components are safe from voltage and current spikes.
FETs are an integral part of many electronic circuits and device designs. They are especially well-suited for power applications due to their low on-state resistance, high current capabilities, and low voltage drop. FDMS86255ET150 is no exception, it is capable of providing the same level of power efficiency as other FETs but at a lower overall cost.
Due to its low input capacitance and low gate threshold voltage, the FDMS86255ET 150 is designed to be used in demanding applications that require fast, high-current switching such as ESD and EMI applications. It is also well-suited for applications that require linear voltage regulation such as DC-DC converters, as well as systems that require low power consumption and enhanced heat dissipation.
As mentioned previously, the N-Channel MOSFET operates by controlling current flow through an electric field. This is accomplished by connecting the gate of the FET to a reference voltage. When the voltage across the gate-source junction becomes great enough, a majority of the current will flow through the FET instead of through the load. By controlling the voltage across the gate-source junction, the FET can be used to regulate the amount of current going through the load.
The FDMS86255ET150 is rated to handle a maximum current of 50-amp pulses and can switch up to 1.2-amp continuous current. It also has a maximum input capacitance of 0.5-picofarads. This low input capacitance combined with its low gate threshold voltage allows it to switch quickly, reducing the amount of time it takes for the device to reach its operating state.
In addition to its impressive electrical characteristics, the FDMS86255ET150 also boasts an impressive temperature range, with a maximum operating temperature of 150-degrees Celsius. This makes it well-suited for environments that require higher operating temperatures.
Given its impressive characteristics and low cost, the FDMS86255ET150 is an ideal solution for a variety of applications and designs. From high-speed signal processing to power regulation, the FET can provide the performance and reliability that designers need at an affordable price.
The specific data is subject to PDF, and the above content is for reference
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