Allicdata Part #: | FDMS86202ET120TR-ND |
Manufacturer Part#: |
FDMS86202ET120 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 120V POWER56 |
More Detail: | N-Channel 120V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 18... |
DataSheet: | FDMS86202ET120 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 187W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4585pF @ 60V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 102A (Tc) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMS86202ET120 is a single Formosa FET (Field Effect Transistor) designed for general-purpose high-voltage switching applications. It is a three terminal N-Channel enhancement mode MOSFET that is capable of operating at a voltage of up to 120V and a current of up to 200A. The FDMS86202ET120 is a highly versatile device that can be used for both low-side and high-side switches in a variety of switch-mode power supplies and automotive systems.
The FDMS86202ET120 utilizes FET technology to provide the advantage of an efficient power switching solution. FET technology relies on the electrical field generated within the gate-oxide layer of the device to control the current flow between the source and the drain. The gate-oxide layer is composed of a thin dielectric layer which acts as an insulator between the gate and the gate-oxide layer, preventing any short circuit between the source and the drain. FETs are also more efficient than traditional bipolar transistors as they require less power to operate, resulting in lower power losses.
The FDMS86202ET120 is composed of a number of components including a gate, a source, a drain, and a substrate layer. The gate is made from a metal oxide semiconductor which is connected to the source and the drain. The source and the drain are then connected to the substrate layer, allowing for the current passage between the source and the drain. The gate is then powered with a voltage which is applied to the gate terminal. When this voltage is increased or decreased, it will cause changes in the electrical field within the gate-oxide layer, resulting in changes to the conductivity between the drain and the source.
The FDMS86202ET120 has a number of advantages over other power switching solutions. Its high-voltage rating allows for increased safety and better protection of the components. Additionally, the device operates with lower power losses than other traditional power switching solutions due to its low on-resistance ratings. It is also suitable for use with a variety of inputs, such as DC or AC power sources, and with high-current applications. Additionally, the device is RoHS compliant and is available in a variety of package types.
The FDMS86202ET120 is also suitable for use in a number of different applications. It can be used for switching higher power loads such as motors, solenoids, relays, and more. Additionally, it is useful for automotive applications such as engine and transmission control, immobilizer systems, and ECU (Electronic Control Unit) testing. It is also suitable for HVAC (Heating, Ventilation, and Air Conditioning) control applications, and industrial automation.
The FDMS86202ET120 MOSFET is a versatile and efficient way to provide power switching solutions in a variety of different applications. Its high voltage and current rating make it suitable for a variety of different switching applications, and its low power losses mean that it can operate with a high degree of efficiency. Additionally, its RoHS compliance puts it in line with other environmental regulations, and its wide variety of package options makes it suitable for use with a wide range of inputs. As such, the FDMS86202ET120 MOSFET is an ideal choice for a variety of high-efficiency power switching applications.
The specific data is subject to PDF, and the above content is for reference
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