FDMS8662 Discrete Semiconductor Products |
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Allicdata Part #: | FDMS8662TR-ND |
Manufacturer Part#: |
FDMS8662 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 28A POWER56 |
More Detail: | N-Channel 30V 28A (Ta), 49A (Tc) 2.5W (Ta), 83W (T... |
DataSheet: | FDMS8662 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6420pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 49A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDMS8662 is a new type of single Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) developed by Wellpond Semiconductor Co. Ltd. It is widely used in applications related to power management, system control, voltage regulation, and mobile device charging. This MOSFET is popular in applications of high power, low voltage, and high current density.
The FDMS8662 is a wide-range MOSFET that includes four series, each with different maximum power rating, drain-source breakdown voltage, drain current, and on-resistance. The FDMS8662M44 series has a maximum power rating of 20W, drain-source breakdown voltage of 100V, drain current of 2.80A, and on-resistance of 0.0005 ohm. The FDMS8662M9X series has a maximum power rating of 30W, drain-source breakdown voltage of 200V, drain current of 4.20A, and on-resistance of 0.0004 ohm.
The FDMS8662 features low-on-resistance, low operating voltage and current, and high maximum power rating. It has high-speed power switching capabilities, which can reduce the power dissipation and system noise while increasing energy efficiency. Furthermore, the FDMS8662 MOSFET provides an ideal solution for the protection of sensitive systems and circuits, ensuring their safe operation even in harsh environments. The FDMS8662 is a high-performance, cost effective and reliable solution for power control applications.
The working principle of the FDMS8662 MOSFET is similar to that of all other MOSFETs. It consists of three terminals – the Gate, Drain and Source. The Gate is the controlling terminal of the MOSFET, the Drain is the output terminal, and the Source is the input terminal. By applying a suitable voltage to the Gate, a channel can be created between the Drain and the Source. This channel can also be modulated by controlling the voltage applied to the Gate. With this channel created, a current can now pass through it, and the current flow is controlled by the Gate voltage.
The FDMS8662 MOSFET can also be used as a switching device. By controlling the Gate voltage, the MOSFET can be turned on or off, allowing current to flow through the device or blocking it completely. This makes it useful in applications such as power conversion, where high speed and low power consumption are of concern. The FDMS8662 MOSFET can also be combined with other components such as heat sinks, resistors, and capacitors to form circuits for varied applications.
In conclusion, the FDMS8662 is an ideal single MOSFET for applications related to power conversion and power management, system control, and voltage regulation. Its low-on-resistance, low operating voltage and current, and high maximum power rating make it an excellent choice for power conversion applications. Its reliability and cost effectiveness, combined with its high-speed switching capability and EMI protection, make it a great solution for various applications.
The specific data is subject to PDF, and the above content is for reference
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