FDMS8660S Discrete Semiconductor Products |
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| Allicdata Part #: | FDMS8660STR-ND |
| Manufacturer Part#: |
FDMS8660S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 25A POWER56 |
| More Detail: | N-Channel 30V 25A (Ta), 40A (Tc) 2.5W (Ta), 83W (T... |
| DataSheet: | FDMS8660S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4345pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 113nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FDMS8660S is a single Depletion Mode N-channel MOSFET, Made with a vertical DMOS process in an industry-standard small 5x6mm PowerDFN package. This type of transistor is well-suited for enhanced power sourcing, multiplexing, load switching, and amplifier applications. This short article will explain the common applications of the FDMS8660S as well as its working principle.
Application Field
The FDMS8660S is a high-side MOSFET with a maximum operating voltage of 60V and a maximum operating current of 8A. This type of transistor is commonly deployed in automotive and industrial application due to its incredible features such as low on-resistance, an efficiency of 98% even at saturated conditions, and low gate charge. It is also suitable for applications in Smart Meters, Battery Management Systems, Home Automation and Motor Controls, Power Converters/Inverters, Home Appliances, Telecoms/PORT Equipment, and Electrical Tools.
Working Principle
The FDMS8660S transistor is a depletion-mode device, meaning it is normally turned on with zero gate voltage, or until a negative bias is applied. As a matter of fact, the FDMS8660S is the only N-channel depletion-mode MOSFET available today that can take a negative gate voltage and still switch properly. When gate voltage is applied, electrons will bend and move, causing the threshold voltage of the device to increase. This in turn reduces the flow of electrons through the channel and as a result, reducing the device\'s on-resistance. The source-to-drain resistance (Rds) of the FDMS8660S is controlled by the gate to source voltage (Vgs). The Rds for the FDMS8660S is typically between 0.3Ω and 0.6Ω.
Conclusion
The FDMS8660S is an excellent choice for a variety of automotive, industrial and consumer applications. This type of transistor is highly efficient, capable of handling high voltages and currents and is readily available in a variety of packages. Additionally, it is a depletion-mode MOSFET and is capable of handling a negative gate voltage while still exhibiting normal switching behavior. Application of this device includes Smart Meters, Battery Management Systems, Home Automation and Motor Controls, Power Converters/Inverters, Home Appliances, Telecoms/PORT Equipment and so forth.
The specific data is subject to PDF, and the above content is for reference
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FDMS8660S Datasheet/PDF