FDMS0308CS Discrete Semiconductor Products |
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Allicdata Part #: | FDMS0308CSTR-ND |
Manufacturer Part#: |
FDMS0308CS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V POWER56 |
More Detail: | N-Channel 30V 22A (Ta) 2.5W (Ta), 65W (Tc) Surface... |
DataSheet: | FDMS0308CS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4225pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 21A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDMS0308CS is a field-effect transistor (FET) which belongs to the single MOSFET family. It is compatible with correction systems and also used in power amplifiers and power converters. It is designed to switch from its on state to its off state very fast while minimizing power dissipation in case of short-circuit.
FDMS0308CS consists of three terminals: the source, the gate, and the drain. It contains two types of channel regions: a channel region and a P-type channel region. The source and drain are connected to a section of N-type channel regions, which allows electrons to move freely through the material. When a bias voltage is applied on the gate, it attracts the electrons to the gate. This suspends the flow of electrons from the source to the drain and creates an insulated barrier of electron-depleted material or the “channel” at the surface between the source and the drain, thus forming the electrically isolated output from the input.
Traditionally, FETs have been used in applications that require switching the device between an on and off state for data acquisition, like audio and video signal processing, analog/mixed-signal circuit designs, and pre-amplifiers. With the rise of the Internet of Things (IoT) and more sophisticated applications, the need for transistors that are capable of switching quickly and that dissipate very little power have become increasingly important.
FDMS0308CS is an ideal FET for many of these applications due to its very low input capacitance, fast switching speed, and very low on-resistance. The input capacitance is very low because it only contains the two N-type channel regions of the FET and no P-type channel region, whereas a FET with a P-type channel has significantly higher input capacitance and requires longer switching times. This low input capacitance allows the FDMS0308CS to switch very quickly, generally in the nano-second range.
In addition to its fast switching time, the FDMS0308CS also has very low on-resistance. On-resistance is the amount of resistance the device presents when it is in the on position. The lower the on-resistance, the less power is wasted from the device when it is in the on state, which allows it to be used in more power-efficient applications. The FDMS0308CS’s low on-resistance of 0.75 Ohm also minimizes power loss in case of short-circuit, allowing it to be used safely for even higher current applications.
Overall, the FDMS0308CS is a popular choice for many applications due to its low input capacitance, fast switching speed, and low on-resistance. It is often used in audio and video signal processing, analog/mixed-signal circuit designs, pre-amplifiers, and many power-sensitive IoT applications. The device also offers improved safety with its low on resistance and low power dissipation in case of short-circuit, making it one of the best options for many modern applications.
The specific data is subject to PDF, and the above content is for reference
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