Allicdata Part #: | FDMS0309AS_SN00347-ND |
Manufacturer Part#: |
FDMS0309AS_SN00347 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 30V 21A (Ta), 49A (Tc) 2.5W (Ta), 50W (T... |
DataSheet: | FDMS0309AS_SN00347 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 49A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDMS0309AS_SN00347 is an N-channel enhancement mode Field-effect Transistor (FET), commonly referred to as a MOSFET. It is a type of transistor which can be used to control the flow of current through a circuit. In particular, the FDMSO309AS_SN00347 is a single type MOSFET, meaning it has just one gate which is closed in order to regulate the current. The gate is the terminal which is responsible for controlling the current between the source and drain terminals.
Application Field
The FDMS0309AS_SN00347 is designed for applications that require high switching speeds and low “on” resistance. It is suitable for use in power supply design, power amplifier design and other related applications. It is also suitable for use in switching regulators and switching applications that require higher efficiency, such as in photovoltaic systems, lighting systems, or motor control applications.
The device can be used in switching applications such as rectifiers, inverters, battery chargers, photovoltaic systems, lighting systems, motor control applications, and other related applications.
It can also be used in high speed analog circuits and low noise switching circuits.
Working Principle
The FDMS0309AS_SN00347 is a voltage-controlled FET device. When the gate voltage is applied, a conductive channel is created between the source-drain region, which then allows current to flow through the transistor. The current flow is directly related to the gate voltage, meaning the higher the gate voltage, the higher the current flow.Therefore, the gate voltage can be used to control the current flow through the device.
In the case of the FDMS0309AS_SN00347, it has a “low” gate voltage threshold, which means that a small amount of gate voltage is required to open the transistor, allowing current to flow through. This means that the device can be used in applications that require fast switching times and low on-resistance.
The device can also be used in applications where the load current needs to be constant and precise, such as in switching regulators. When used in this way, the gate voltage can be set to the desired level in order to achieve the desired load current.
In conclusion, the FDMS0309AS_SN00347 is a N-channel enhancement mode Field-effect Transistor (FET) which is suitable for use in high-speed switching applications, analog circuits, and low noise switching applications. It has a low gate voltage threshold which allows current to flow through in response to small gate voltage changes, and it can also be used in applications that require precise and constant load current.
The specific data is subject to PDF, and the above content is for reference
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