FDMS8670 Allicdata Electronics

FDMS8670 Discrete Semiconductor Products

Allicdata Part #:

FDMS8670TR-ND

Manufacturer Part#:

FDMS8670

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 24A POWER56
More Detail: N-Channel 30V 24A (Ta), 42A (Tc) 2.5W (Ta), 78W (T...
DataSheet: FDMS8670 datasheetFDMS8670 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3940pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDMS8670 field effect transistor, more commonly known as an n-channel power MOSFET, is a type of field effect transistor (FET) that is used in a variety of applications. It is a field-effect transistor (FET) containing a three-terminal source, gate, and drain with an additional control gate or "body" terminal. FETs are semiconductor devices that are used to control the flow of current in an electrical circuit. The FDMS8670 is a single-poled type of power MOSFET that is usually used in applications where the need for low on-state resistance and high-power handling capability is necessary.

The FDMS8670 offers a high breakdown voltage of 200V and a low on-resistance of 0.030 Ohm. It can also handle up to 100A of current, making it ideal for high-power applications such as switching power supplies, converters, and motor control applications. Additionally, the device has an operational temperature range of -55°C to +150°C, making it suitable for use in a variety of environments.

The FDMS8670 has several unique features that make it ideal for certain applications. Firstly, the device can be used in low-side and high-side switch configurations, allowing it to be used in a wide range of applications. Secondly, the device allows for high switching speeds, allowing it to be used in applications where fast switching times are needed. Finally, the device\'s low on-resistance makes it suitable for low voltage drop and power loss applications.

The principle of operation for the FDMS8670 is similar to that of other FETs. It works by using a gate voltage to control the flow of the drain current. The gate voltage is applied between the source and drain terminals, resulting in an electric field at the interface between the two terminals. When the applied gate voltage is increased, the electric field is increased, resulting in an increase in the current that flows from the drain terminal to the source terminal. When the applied gate voltage is decreased, the electric field is also decreased, and the current is decreased.

The FDMS8670 is a versatile device that can be used in a wide range of applications. Its ability to handle high power, low on-resistance, and fast switching speeds, make it an ideal choice for many different applications. Additionally, the device can be used in low-side and high-side switch configurations, and due to its low voltage drop and power loss, it is suitable for applications where low power consumption is necessary. The FDMS8670 is a very popular and reliable FET, and has been used in countless applications over the years.

The specific data is subject to PDF, and the above content is for reference

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