FDMS8320L Allicdata Electronics
Allicdata Part #:

FDMS8320LTR-ND

Manufacturer Part#:

FDMS8320L

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 36A 8-PQFN
More Detail: N-Channel 40V 36A (Ta), 100A (Tc) 2.5W (Ta), 104W ...
DataSheet: FDMS8320L datasheetFDMS8320L Datasheet/PDF
Quantity: 1000
1 +: $ 0.84800
10 +: $ 0.82256
100 +: $ 0.80560
1000 +: $ 0.78864
10000 +: $ 0.76320
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11110pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS8320L is a low-voltage, low-power, depletion-mode MOSFET that has a wide range of applications, especially in power management circuitry and general-purpose amplifiers. This type of MOSFET is generally considered to be the optimal device for a variety of power supply and amplifier applications because it offers superior performance, particularly in regards to its on-resistance and low-noise characteristics.

The FDMS8320L has a maximum on-resistance of 10 mΩ, which makes it a highly efficient MOSFET in terms of power dissipation. In addition, its low-noise capabilities make it ideal for use in noise-sensitive applications such as audio amplifiers and acoustic design. The device also features a low operating voltage (VGS = -4V to -12V), which makes it suitable for use in low-voltage, low-power applications.

The primary working principle of the FDMS8320L is a bi-directional FET, or a field-effect transistor, which can be used in both switching and amplifier applications. In switching applications, the device is able to control electrical current and voltage, while in amplifier applications, it can be used to amplify or reduce electrical signals.

The FDMS8320L is designed to function as a voltage-controlled device, and its gate-to-source voltage (VGS) directly affects the current flow through the device. When the VGS is low, the MOSFET is off (negative gate-to-source voltage produces a lower drain-to-source current), and no current flows through the device. When the VGS is higher, the device is on and current flows through the device. Furthermore, when a positive voltage is applied to the gate, an enhanced channel is created, allowing a higher current to flow through the device.

The FDMS8320L is typically used for a number of general-purpose amplifier circuits, power management circuits, and high-side switching applications. Its wide range of on-resistance and low-noise characteristics make it a very versatile device that can be used in a variety of applications. For example, it is often used as a high-side switch in automotive and other power management applications, as well as an amplifier in audio and radio frequency (RF) applications.

The FDMS8320L is an excellent choice for those looking for a device with low power consumption, high noise immunity, and low-noise characteristics. Its low-voltage, low-power capabilities make it ideal for use in a variety of power supply and amplifier applications, as it ensures that consume no more power than necessary.

The specific data is subject to PDF, and the above content is for reference

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