FDMS8672AS Discrete Semiconductor Products |
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Allicdata Part #: | FDMS8672ASTR-ND |
Manufacturer Part#: |
FDMS8672AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 18A POWER56 |
More Detail: | N-Channel 30V 18A (Ta), 28A (Tc) 2.5W (Ta), 70W (T... |
DataSheet: | FDMS8672AS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 28A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMS8672AS is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that is creating a revolutionary impact on the kind of system and device design available to engineers today. As the name suggests, this is a single-transistor device, meaning it has one terminal for input and one for output. The FDMS8672AS is a N-channel MOSFET and is a great choice for applications such as power management, LED displays, high-frequency switching and more.
The FDMS8672AS uses the “N” type field effect, where a single positive voltage triggers a positive current flow through the transistor, allowing it to be used for logic switching, amplifying, and even power switching depending on the exact design of the device. As it is able to operate across a broad voltage range, the FDMS8672AS provides a wide range of applications possibilities. The device features a low on-resistance, which translates to excellent switch characteristics so that it is able to effectively switch and route low-voltage signals or even high-power devices.
The FDMS8672AS provides an excellent degree of protection against electrostatic discharge (ESD) because of its robust construction and enhanced breakdown voltage characteristics. This makes it suitable for use in sensitive systems, such as medical instrumentation, consumer electronics, and automotive applications.
The FDMS8672AS also has a low on-state resistance (R DS(ON) ), making it capable of providing excellent efficiency and power management. The MOSFET can handle higher current loads and minimize power losses during switching, which makes it the go-to choice for power management in applications that demand greater efficiency and more speed.
The working principle of the FDMS8672AS is that it contains a gate, a source and a drain. When the gate receives a positive voltage, it turns the channel on, allowing current to flow from the source to the drain and thus activating the device. This type of transistor is used to control and switch large amounts of current or voltage, depending on the design of the circuit. As it is able to do this very quickly and efficiently, it can reduce the size of power control circuits. Additionally, this MOSFET can be used to control and switch AC current, as well as DC electricity.
The FDMS8672AS is an ideal choice for engineers looking to revolutionize their applications. From its ability to operate across a broad voltage range, to its low on-resistance and ESD protection characteristics, to its excellent switching and power efficiency, the FDMS8672AS is the ideal choice for applications such as power management, LED displays, high-frequency switching and more.
The specific data is subject to PDF, and the above content is for reference
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