FDMS8672AS Allicdata Electronics

FDMS8672AS Discrete Semiconductor Products

Allicdata Part #:

FDMS8672ASTR-ND

Manufacturer Part#:

FDMS8672AS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 18A POWER56
More Detail: N-Channel 30V 18A (Ta), 28A (Tc) 2.5W (Ta), 70W (T...
DataSheet: FDMS8672AS datasheetFDMS8672AS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDMS8672AS is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that is creating a revolutionary impact on the kind of system and device design available to engineers today. As the name suggests, this is a single-transistor device, meaning it has one terminal for input and one for output. The FDMS8672AS is a N-channel MOSFET and is a great choice for applications such as power management, LED displays, high-frequency switching and more.

The FDMS8672AS uses the “N” type field effect, where a single positive voltage triggers a positive current flow through the transistor, allowing it to be used for logic switching, amplifying, and even power switching depending on the exact design of the device. As it is able to operate across a broad voltage range, the FDMS8672AS provides a wide range of applications possibilities. The device features a low on-resistance, which translates to excellent switch characteristics so that it is able to effectively switch and route low-voltage signals or even high-power devices.

The FDMS8672AS provides an excellent degree of protection against electrostatic discharge (ESD) because of its robust construction and enhanced breakdown voltage characteristics. This makes it suitable for use in sensitive systems, such as medical instrumentation, consumer electronics, and automotive applications.

The FDMS8672AS also has a low on-state resistance (R DS(ON) ), making it capable of providing excellent efficiency and power management. The MOSFET can handle higher current loads and minimize power losses during switching, which makes it the go-to choice for power management in applications that demand greater efficiency and more speed.

The working principle of the FDMS8672AS is that it contains a gate, a source and a drain. When the gate receives a positive voltage, it turns the channel on, allowing current to flow from the source to the drain and thus activating the device. This type of transistor is used to control and switch large amounts of current or voltage, depending on the design of the circuit. As it is able to do this very quickly and efficiently, it can reduce the size of power control circuits. Additionally, this MOSFET can be used to control and switch AC current, as well as DC electricity.

The FDMS8672AS is an ideal choice for engineers looking to revolutionize their applications. From its ability to operate across a broad voltage range, to its low on-resistance and ESD protection characteristics, to its excellent switching and power efficiency, the FDMS8672AS is the ideal choice for applications such as power management, LED displays, high-frequency switching and more.

The specific data is subject to PDF, and the above content is for reference

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