FDMS8026S Allicdata Electronics
Allicdata Part #:

FDMS8026STR-ND

Manufacturer Part#:

FDMS8026S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V POWER56
More Detail: N-Channel 30V 19A (Ta), 22A (Tc) 2.5W (Ta), 41W (T...
DataSheet: FDMS8026S datasheetFDMS8026S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS8026S is a N-channel Enhancement Mode MOSFET. It has been designed specifically to address the needs of low voltage, low power switching applications that require high efficiency, low on-resistance, and low gate drive power. As a result, it is one of the preferred components for a variety of switching systems such as those used in remote control, industrial, and automotive applications, as well as for power supply and battery chargers.

The FDMS8026S is a small package transistor: also known as a Field Effect Transistor (FET), which means that it has the same structure and arrangement of components as a regular transistor but with a slightly different structure and thus, different characteristics. The FET is comprised of two regions, the source and the drain, which are separated by the channel region. The source is the positive terminal of the device, the drain is the negative terminal, and the channel is the semi conductive material that separates these two regions.

The FDMS8026S works on the principle of a charge trapping effect, in which the voltage applied between the drain and the source creates an electric field in the channel region. This electric field causes free electrons to be attracted to the surface of the FET, creating a region of accumulation or a depletion region between the source and the drain. This region is effectively the gate of the FET and is used to control the current flow between the source and the drain. By changing the voltage of the gate, the size of the depletion region can be adjusted, allowing for current to be regulated. The higher the gate voltage, the larger the depletion region and the more current that will flow between the source and the drain.

The FDMS8026S is a very versatile component with a wide range of applications. It is used in many different electronic systems, including power supplies, motor controllers, and audio systems, as well as in automotive applications. It is also used in power management systems, as it provides a relatively low on-resistance and low gate drive levels. Additionally, it is used in robotic and autonomous systems, as its highly efficient switching capability ensures accurate and high-speed control over the motors. As it has a very low on-resistance, it is an ideal choice for power supplies, allowing for increased efficiency and the ability to regulate the power with high accuracy. It is also a popular component for A/C power distribution and battery chargers.

In conclusion, the FDMS8026S is a versatile component that is suitable for a variety of low voltage, low power switching applications. Its efficient switching capability and low on-resistance make it an ideal choice for power supplies, motor controllers, and power management systems, as well as for A/C power distribution and battery chargers. Its highly efficient switching capabilities are also ideal for robotic and autonomous systems, where accurate and high-speed control is required over the motors.

The specific data is subject to PDF, and the above content is for reference

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