FDMS3622S

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The FDMS3622S is a low voltage N-channel MOSFET array suitable for portable and low power applications. This device consists of three N-channel MOSFETS connected in parallel and operated from a common gate terminal, resulting in three independent enhancement-type MOSFETs on a single silicon substrate. The low on-state resistance of the FDMS3622S allows high switching power, thus saving power and improving efficiency. This makes the FDMS3622S ideal for a variety of applications ranging from DC/DC converters to off-line switching power supplies.

The FDMS3622S is an enhancement mode device with an extremely low on-state resistance. This makes it ideal for low voltage and low power applications, such as switch mode power supplies or DC/DC converters. Additionally, its low drain-source on-state resistance provides better regulation of the load current, improving system efficiency. The common gate terminals of the FDMS3622S further reduce design complexity and cost, while providing low gate to source capacitance for improved switching performance.

The FDMS3622S also features a maximum drain-source breakdown voltage rating of 12V and an ESD rating of 2000V, making it ideal for applications where protection from transient or ESD events is desired. The operating temperature range of this device extends from -40°C to +85°C, providing it with good temperature stability.

The FDMS3622S is well suited to applications requiring higher current capacities, including DC/DC converters and motor control systems. Its low package parasitics make it ideal for RF applications as well. Additionally, due to its exceptionally low RDSon, the FDMS3622S can be used to provide power savings in applications where low power consumption is of paramount concern. This includes portable electronic devices, such as mobile phones, tablets, and digital cameras.

The FDMS3622S has a standard pinout configuration of Source, Gate, Drain N1, Gate N2, Drain N2, and Gate N3. This provides good flexibility in design layout, allowing the designer to optimize their layout to suit the application. The device also features a fast switching speed, low gate to source capacitance and a low on-state resistance.

In conclusion, the FDMS3622S is an ideal choice for applications requiring high current loads, low power consumption and efficiency. Its enhanced on-state resistance and its standard pinout configuration allow for easy and cost effective implementation. Furthermore, the fast switching speed and low on-state capacitance make it well suited for RF and portable applications.

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