FDMS7650 Allicdata Electronics
Allicdata Part #:

FDMS7650TR-ND

Manufacturer Part#:

FDMS7650

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V POWER56
More Detail: N-Channel 30V 36A (Ta), 100A (Tc) 2.5W (Ta), 104W ...
DataSheet: FDMS7650 datasheetFDMS7650 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14965pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 209nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 0.99 mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS7650 is a single-channel, 3.3V N-channel MOSFET that offers extremely low RDS(ON) values of 35 mΩ (at 10 V) and high maximum current handling power of 40 A. This, combined with its high-temperature operating capabilities, makes it the perfect option for power-management applications, including high-current and low-loss switching applications.

The FDMS7650 is built on STMicroelectronics\' PowerTrench process, which provides superior RDS(ON) performance and extends the temperature range of operation. It also features a low-gate-charge Qg, ensuring an efficient switching power requirement, as well as a fast internal body diode to protect the device in brief overload scenarios.

TheFDMS7650 combines low RDS(on) max in package with an internal Trench-FET structure to enhance the overall performance. The device follows a constant output conductance technology to ensure low power consumption and reduce conduction losses. The device is also equipped with a higher temperature rating, which makes it suitable for use in extreme operating temperature environments. Additionally, the FDMS7650 features a low gate charge and a high avalanche-qualification voltage rating to guarantee safety and reliability during extreme switching events.

The FDMS7650 is an ideal device for high-speed switching and reverse-blocking operations. It works on a simple principle of controlling the current flow between the drain and source terminals by applying voltage to the gate terminal. When current flows from the drain to the source, the transistor operates in the linear zone, allowing for accurate control of current at various operating voltages. When the gate voltage is increased further, the transistor switches rapidly from linear operation to cut-off operation, effectively blocking current flow through the device.

In order to ensure that the MOSFET device operates in its safe and efficient working range, its external circuit must be designed properly. Appropriate selection of components and proper design of the circuit can dramatically improve the performance of the device. Appropriate selection of bias and control circuits is important to ensure that the device is not overdriven and to ensure that proper switching delays are met during turn-on, turn-off, and other operation events.

The FDMS7650 is suitable for use in high-current, low-loss switching applications, as well as protection circuits and other AC/DC voltage conversion and power supplies. It is also suitable for applications such as level-shifting, power management, power supply, DC-DC and other power conversion solutions. Its low gate charge Qg and high avalanche-qualification voltage rating guarantees safety and reliability during extreme switching events.

In conclusion, the FDMS7650 is an ideal option for various power control and switching applications, thanks to its low RDS(ON) values, high current handling power and high temperature rating. Furthermore, the use of a constant output conductance technology allows for low power consumption and reduces conduction losses, while its low-gate-charge and high avalanche-qualification voltage rating ensure improved safety and reliability.

The specific data is subject to PDF, and the above content is for reference

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